POLIMENI ANTONIO

Professore Associato 
Settore scientifico disciplinare di riferimento  (FIS/01)
Ateneo Università degli Studi di ROMA "La Sapienza" 
Struttura di afferenza Dipartimento di FISICA 
Recapiti Elenco recapiti telefonici
E-Mail antonio.polimeni@uniroma1.it

Orari di ricevimento

Lun, Mar, Mer, Gio, Ven 8-20

Curriculum

Curriculum Vitae of Antonio Polimeni

Personal data Born in Rome (Italy) on November 14, 1968
Present Position Associate Professor at the Physics Department, University of Rome “La Sapienza”.
Address:
Piazzale A. Moro 2, 00185 Roma, Italy
Phone: +39-06-49914770 (office), +39-06-49914385 (lab.)
Fax: +39-06-4957697
E-mail: polimeni@roma1.infn.it

Education and Research Experience
1988 – 1993 Laurea degree in Physics, 22/7/1993, Physics Department, University of Rome “La Sapienza”.
Subject:
“Optical characterisation of InGaAs/GaAs quantum heterostructures: carrier confinement in barriers and wells”
Supervisors: Prof. M. Capizzi, Prof. A. Frova.
Mark: 110/110 cum Laude.
1993 – 1996 PhD. in Physics, Physics Department, University of Rome “La Sapienza”.
Subject:
“Optical properties of InGaAs/GaAs quantum heterostructures and disorder effects”
Supervisor: Prof. M. Capizzi.
1997 – 1999 Research Assistant in the
“Quantum Transport and Spectroscopy of Semiconductors” group headed by Prof. L. Eaves
at the School of Physics and Astronomy, Nottingham University, United Kingdom.
1998 – 1999 Tutor at the School of Physics and Astronomy, Nottingham University, United Kingdom.
November 1999 – October 2002 Lecturer at Physics Department, University of Rome “La Sapienza”.

November 2002 Granted tenure as Lecturer at Physics Department, University of Rome “La Sapienza”.
November 2010 Associate professorship.
2013
National habilitation as Full Professor

Track Record
Antonio Polimeni is Associate Professor in Experimental Physics at Dipartimento di Fisica, Sapienza Università di Roma. He received his PhD in Physics in 1997 and was a post-doctoral Research Associate at the School of Physics and Astronomy, Nottingham University (UK), from 1997 to 1999. He is at Sapienza Università di Roma since 2000. In 2013, he got the national habilitation as Full professor.
His research concerns the electronic properties of semiconductor materials and nanostructures investigated by optical spectroscopy and transport techniques.
During his PhD in Physics in Roma, he investigated the electronic properties of low-dimensional semiconductor heterostructures (quantum wells and dots) by means of photoluminescence (PL) and PL excitation spectroscopy. In particular, he studied the role played by interfacial and alloy disorder on the lineshape of radiative recombination in quantum wells, the effect of atomic hydrogen irradiation on these systems, and the electronic properties of semiconductor quantum dots. From 1997 to 1999, Antonio Polimeni was in the group of “Quantum Transport and Spectroscopy of Semiconductors” headed by Prof. L. Eaves in the School of Physics and Astronomy, Nottingham University, where he was appointed as a Research Assistant for three years. In Nottingham, he investigated the structural, transport, and optical properties of self-assembled quantum dots, including the effects of magnetic and electric fields on the dot electronic structure. A relevant part of his research activity in Nottingham was focused on the device applications of quantum dots for high-performance semiconductor lasers. In Nottingham Antonio Polimeni was involved also in teaching as a tutor of undergraduate students.
In 2000, Antonio Polimeni joined the Physics Department, University of Rome “La Sapienza” as Lecturer. After three years’ probation, he was granted a tenure position. In 2010, Antonio Polimeni was appointed Associate Professor and in 2013 he obtained the national habilitation as Full Professor. In Rome, Antonio Polimeni’s interests moved to the electronic properties of dilute nitride and oxide semiconductors, which are materials of high relevance for optoelectronic, photovoltaics, and solid state lighting applications. In particular, he employed high magnetic fields to understand the peculiar physical properties of dilute nitrides also in the presence of high hydrostatic pressure. The most relevant results of his activity in Rome are related to the discovery of the effects that hydrogen irradiation exerts on the electronic and structural properties of dilute nitrides and oxides. This discovery offers the opportunity to fabricate novel nanostrctures with planar architecture. Most recently, the research of Antonio Polimeni focused on the optical, electronic, transport and structural properties of nanowires that feature great prospects in various applicative fields including photovoltaics, nanomedicine and optoelectronics.
He worked also at the High Magnetic Field Laboratory in Nijmegen (The Netherlands) and Grenoble (France), at the Philipps-University of Marburg (Germany) and at the European Synchrotron Radiation Facility in Grenoble (France). He is presently collaborating with different groups worldwide.
Antonio Polimeni has taught Optics and Electromagnetism at the Physics degree course, Quantum Physics and Solid State Physics at the Electronic Engineering degree course, Mechanics at the Biotechnology degree course, and Statistics at the Chemistry degree course. He also lectured Semiconductor Nanostructures at Physics and Materials Science PhD courses. Antonio Polimeni supervised the thesis of 26 Graduate students, 19 Master students and 11 PhD students in Physics and Materials Science. He is member of the PhD board in Materials Science at Sapienza Università di Roma, member of the Physics Department and Faculty of Science Council. He was in charge for the outreach activities of the Physics Department and he is responsible for the Physics Department building maintenance.
Antonio Polimeni acts as referee for Physical Review Letters, Physical Review B, Nature Materials, Nature Photonics, Applied Physics Letters, Nanotechnology, and other international journals. He was member of the organizing committee of the 22nd Condensed Matter Division conference of the European Physical Society and of the 101st conference of the Italian Physical Society. He is member of the Engineering and Physical Sciences Research Council peer review college (UK), he was member of the management committee of the EU COST Action “Novel gain materials and devices based on III-N-V compounds”, reviewer of the Academy of Sciences of the Czech Republic and of the Romanian National Council for Scientific Research.
He is member of the Editorial Board of Journal of Semiconductors (Institute of Physics Publishing, UK).
Antonio Polimeni was awarded the prize for the best oral presentation at the LXXXVI national conference of the Italian Physical Society (Condensed Matter Physics section), and the “Umberto Maria Grassano Prize” of the Italian Physical Society in 2000. In 2003, Antonio Polimeni was awarded the “Ugo Campisano Prize” given by the Italian National Institute of Matter Physics to a researcher younger than 40 years. In 2004, he obtained an appointment of a two year grant “Young Researcher Project” by the Italian Ministry of University and Scientific and Technological Research. In 2009, he was awarded the “Tomassoni” prize by “Fondazione Roma -Sapienza”. In 2015, Antonio Polimeni received by the Faculty of Science the prize for “Excellence in teaching”.
In 2011, he coordinated a Marie Curie Action—Intra-European Fellowship (IEF, named SITELiTE—Deterministic coupling between SITE-controlled, dilute nitride-based LighT Emitters and tailor-made photonic-crystal structures) and he received fundings amounting to 193726 €. He was granted the Awards Grant 2014 by Sapienza Università di Roma (53000 €). In 2016, he received funds (35000 €) for “Optical characterization of thin films employed in photovoltaic devices based on CZTS” in collaboration with ENEA (Italian National agency for new technologies, Energy and sustainable economic development). He is presently coordinating a workpackage within an EU project (Innovative Training Network in Horizon 2020, named PROMIS, Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics) worth 516122 €.
Antonio Polimeni co-authored 196 peer-reviewed papers, 4 contributed book chapters, 4 invited journal papers, and 32 papers on conference proceedings. He gave 25 invited talks and seminars.
The number of citations of his works is 3800 resulting in an h-factor equal to 33 (source Google Scholar).

Research highlights
(numbers in square brackets refer to the publication list)
The main results of my scientific activity regard the experimental study of the optical and transport properties of semiconducting nanostructures and their application for optoelectronic devices.
• Observation of quantum confinement on excitons in quantum barriers [2].
• Experimental characterization and modeling of microscopic disorder on the optical properties of semiconductor quantum wells [9,10].
• Study of the electronic properties of semiconductor quantum dots [13,20,42].
• Realization and optimization of lasers based on quantum dots [19,53].
• Magneto-tunneling spectroscopy applied to quantum dot containing devices [50,51].
• Electronic properties of dilute nitrides under high magnetic field and hydrostatic pressure [86,88,92,121].
• Effect of hydrogen on the electronic and structural properties of III-N-V materials [63,76,87,90].
• Defect-assisted band gap engineering in dilute nitrides [115,135, 151].
• Electronic properties of semiconductor nanowires [170, 172,173].

Awards and grants
September 2000
“Umberto Maria Grassano” Prize of the Italian Physical Society.
October 2000
First prize for the best oral presentation at the LXXXVI National Conference of the Italian Physical Society (Palermo) (Condensed Matter Physics section).
May 2002 Appointment of a two year grant “Young Researcher Project” by the Italian Ministry of University and Scientific and Technological Research for the study of the band structure of (InGa)(AsN) alloys.
June 2003 “Ugo Campisano” Prize of the National Institute of Matter Physics awarded to young researchers in the field of Materials Science.
June 2009 “Premio Tomassoni” by Sapienza Universita’ di Roma
August 2017 “Somiya Award for internation collaboration” for Semiconductor Nanowires: Growth, Characterization, Processing and Optoelectronic Devices (Kyoto, Japan).
February 2018 Oustanding referee 2017, Institute of Physics (London, UK)

- 2001-2004 In charge of a workpackage within an EU project in the FP5 programme named Nanomat (Nanostructured and self-assembled materials for electronic and optoelectronics applications, G5RD-CT-2001-00545).
- 2002 Two-year grant by the Italian Ministry of Research and University named “Progetto Giovani Ricercatori” for “experimental studies of the band structure of InGaAsN/GaAsquantum wells by optical spectroscopy under magnetic field”.
- 2005 and 2006 “Programma Vigoni” funds by the Italian Ministry of University and Deutscher Akademischer Austauschdienst (Germny) for “Study of the physical properties of strategic materials for telecommunications and high efficiency conversion of solar energy”.
- 2004, 2005, 2006 , 2013 and 2017 Ateneo funds by Universita di Roma “La Sapienza”.
- 2011-2013 Scientific manager of Deterministic coupling between SITE-controlled, dilute nitride-based LighT Emitters and tailor-made photonic-crystal structures, PIEF-GA-2011-301363, FP7-PEOPLE-2011-IEF, Marie Curie Actions—Intra-European Fellowships (IEF) assigned to Marco Felici (193726 €).
- 2014 Principal investigator Awards (Sapienza Università di Roma) Improving light emission efficiency in semiconductor nanowires by hydrogen-assisted surface and hetero-interface passivation (53000 €).
- 2015 Work package leader in Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics, H2020 - H2020-MSCA-ITN-2014 641899 – PROMIS (516123 €).



Professional activities
Referee for Physical Review Letters, Physical Review B, Nature Materials, Semiconductor Science and Technology, Nanotechnology, and other scientific journals.
- Member of the Campisano Prize committee (Istituto Nazionale di Fisica della Materia).
- Member of the organizing committee of the 22nd conference of the Condensed Matter Division of the European Physical Society (2008).
- Member of the international advisory committee of the international conference “Recent Advances of Low Dimensional Structures and Devices” (2008).
- Reviewer of the Academy of Sciences of the Czech Republic.
- Reviewer of the Engineering and Physical Sciences Research Council (EPSRC, UK)
- Reviewer of the Romanian National Council for Scientific Research (Romania)
- Reviewer of the IsraelScience Foundation (Israel)
- Member of the EU COST Action “Novel gain materials and devices based on III-N-V compounds”.
- Coordinator of the participation of the Physics Department of Sapienza Università di Roma to the program “Scientist Around Youth” promoted by the European Commission (2009 and 2010).
- Member of the Committee for the Autonomy and Innovation of Teaching at the Physics Department of Sapienza Università di Roma.
- Coordinator of the Outreach and Guidance Activities provided to students by the Physics Department
- Member of the Users' Committeee of the European Magnetic Field Laboratory (European facility for high-magnetic field experiments).
- Member of the International Advisory Board of Materials Research Express (Insitute of Physics, London UK).
Short stays in international labs
May 2001: European Synchrotron Radiation Facility (ESRF), Grenoble (France).
October 2002: Grenoble High Magnetic Field Laboratory (GHMLF), Grenoble (France).
October 2005 Philipps-University of Marburg (Germany).
February 2008, October 2009, March 2011, December 2012, and December 2014: High Field Magnet Laboratory (HMFL), Nijmegen (The Netherlands).

University teaching experience
- 2000-2016 Exercise classes in General Physics (Mechanics, Thermodynamics, and Electromagnetism Courses), Optics Laboratory, and Condensed Matter Physics Laboratory, Statistics (Physics course for Chemestry students).
- Specialized courses for Physics PhD students.
- 2005-2006, and 2009-2015 Tenure of Optics and Laboratory course.
- 2000-2015 Supervisor of 11 PhD thesis in Physics and Materials Sciences, Supervisor of 8 Laurea thesis, 11 Laurea Specialistica thesis, and 25 Laurea breve thesis.

Oral contributions to schools, workshops and conferences
Invited talks
- December 2017 “Proton-driven generation of atomically thin, light emitting domes in transition metal dichalcogenides”
Psi-k workshop, 2D layered materials for opto-electronics: a theoretical/computational perspective (Rome, Italy)
- September 2017 “Nano-micro domes produced in bulk transition metal dichalcogenides by proton irradiation”
NanoInnovation 2017 (Rome, Italy)
- September 2017 “Transport and spin properties of excitons, electrons, and holes in wurtzite nanowires”
15th International Conference on Advanced Materials by the Materials Research Society (Kyoto, Japan)
- October 2014 “Optical and magneto-optical properties of InP wurtzite nanowires”
226th meeting of Electrochemical Society “State-of-the-Art Program on Compound Semiconductors (SOTAPOCS)” (Cancun, Mexico)
- September 2014 “Addressing carrier confinement, mass and gyromagnetic factor in semiconductor nanostructures”
Workshop on Optical Properties of Individual Nanowires and Quantum Dots in High Magnetic Field, (Toulouse, France)
- August 2014 “Magneto-Optical Properties of Wurtzite-Phase Semiconductor Nanowires”
8th Nanowire Growth Workshop and Nanowires 2014, (Eindhoven, The Netherlands)
- July 2013 “H effects in dilute III-N-V alloys: from defect engineering to nanostructuring”
27th International Conference on Defects in Semiconductors, (Bologna, Italy)
- June 2012 “Band structure of high-quality wurtzite GaAs in InGaAs-GaAs core-shell nanowires”
Nano-structures self-assembly 2012, S. Margherita di Pula (Sardinia, Cagliari, Italy)
- July 2011 “Nanostructures and novel materials investigated by magneto-photoluminescence spectroscopy at HFML (Nijmegen)”
EuroMagnet meeting, Laboratoire National des Champs Magnétiques Intenses, Toulouse (France)
- July 2010 “Unusual compositional dependence of the exciton reduced mass in GaAsBi”
1st International Workshop on Bismuth Containing Semiconductors, University of Michigan (USA)
- February 2010 “Hydrogen-mediated nanostructuring of dilute nitride semiconductors”
XVIII Ural International Winter School on the Physics of Semiconductors, Ekaterinburg (Russia)
- June 2009 “Hydrogen-induced defect engineering in dilute nitrides semiconductors”
15th Semiconducting and Insulating Materials Conference, Vilnius (Lithuania)
- April 2007 “Hydrogen-induced nitrogen passivation in dilute nitrides: a novel approach to defect engineering”
Material Research Society spring Meeting, San Francisco (CA, USA)
- January 2005 “Carrier localization in (InGa)(AsN) alloys”
Optoelectronics 2005, San Jose (CA, USA)
- July 2004 “Probing the electronic properties of dilute nitrides by carrier localization and effective mass measurements”
General Conference of the Condensed Matter Division, European Physical Society, Prague (Czech Republic)
- July 2003 “Hydrogen related effects in diluted nitrides”
XXII International Conference on Defects in Semiconductors
Aarhus (Denmark)
- June 2002 “Hydrogen as a probe for studying the electronic properties of (InGa)(AsN)/GaAs heterostructures”
International symposium on “N-containing III-V semiconductors: Fundamentals and Applications” of the European Materials Research Society, E-MRS, Strasbourg (France)
- April 2002 “Hydrogen as a probe of the nitrogen charge distribution in (InGa)(AsN)/GaAs”
19th General Conference of the Condensed Matter Division of the European Physical Society, Brighton (United Kingdom)
- February 2002 “Interplay of Nitrogen and Hydrogen in (InGa)(AsN)/GaAs heterostructures”
XIV “Ural International Winter School on the Physics of Semiconductors Electronic properties of low-dimensional semi- and superconductor structures”, Ekaterinburg (Russia)

Invited seminars
October 2017
“Nano-micro domes produced in bulk transition metal dichalcogenides by proton irradiation”
National Research Council, Insitute for Microelectronics and microsystems (Rome, Italy).
September 2017 “Proton irradiation in bulk transition metal dichalcogenides”
Electronic Engineering Department, Tor Vergata University (Rome, Italy).
July 2017 “Proton irradiation in bulk transition metal dichalcogenides”
and
“Addressing the fundamental electronic properties of wurtzite GaAs nanowires by magneto-optical spectroscopy”
Department of Physics, Regensburg University (Regensburg, Germany)

January 2014 “Optical and Magneto-Optical Studies of III-V Semiconductor Nanowires”
Scuola Normale Superiore, Pisa.
December 2009 “Polarization control by strain-engineering in GaAsN/GaAsN:H heterostructures”
Laboratory of Analysis and Architecture of Systems (CNRS), Toulouse, France.
May 2009 “Spatial nanostructuring of dilute nitrides by hydrogen”
University of Essex, United Kingdom.
April 2008 Defect Engineering in Dilute Nitride Semiconductors”
TASC National Laboratory, Trieste (Italy).
May 2003 “Effects of hydrogen on the electronic and lattice properties of (InGa)(AsN)”
Department of Physics and Material Sciences Center, Philipps-University, Marburg (Germany).
July 1999 “Carrier hopping in self-assembled quantum dots”
Nippon Telegraph and Telephone (NTT), Tokyo (Japan).
February 1999 ‘’Carrier hopping in InAs/AlyGa1-yAs self-organized quantum Dots’’
Max-Planck Institute of Microstructure Physics, Halle (Germany).
February 1998 “Next generation laser diodes”,
Department of Physics, University of Sheffield (United Kingdom).
January 1998 “ Optical and Microstructural Studies of Heterostructures and Injection Lasers incorporating (InGa)As Quantum Dots”,
Institut für Festkorperphysik, TU Berlin (Germany).
October 1996 “Disorder and localization effects in InGaAs/GaAs quantum heterostructures”
Department of Physics, University of Nottingham, Nottingham (United Kingdom).


Invited papers in books or reviews
G. Pettinari, A. Polimeni, and M. Capizzi
“Effects of Hydrogenation on the Electronic Properties of Dilute Nitrides”, in
Hydrogenated dilute nitride semiconductors: theory, properties, applications, edited by G. Ciatto (Pan Stanford Publishing, Singapore, 2014)
ISBN 978-981-4463-45-4

A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, M. Felici and M. Capizzi
“Measurement of Carrier Localization Degree, Electron Effective Mass, and Exciton Size in InxGa1-xAs1-yNy Alloys”, in
Semiconductor Research, Experimental Techniques, edited by A. Patanè and N. Balkan (springer, Berlin, Germany, 2012)
A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, M. Felici and M. Capizzi
“Measurement of Carrier Localization Degree, Electron Effective Mass, and Exciton Size in InxGa1-xAs1-yNy Alloys”, in
Dilute Nitrides Semiconductors, edited by M. Henini (Elsevier, Oxford, UK, 2005)
A. Polimeni and M. Capizzi
“Role of Hydrogen in Dilute Nitrides”, in
Physics and applications of dilute nitrides, edited by I. A. Buyanova and W. M. Chen (Taylor and Francis Editors 2004)
M. De Luca and A. Polimeni
“Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy” in
Applied Physics Review 4, 041102 (2017)
A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, and M. Capizzi
“Magnetophotoluminescence studies of InxGa1-xAs1-yNy: a measurement of the electron effective mass, exciton size, and degree of carrier localization”, in
Journal of Physics: Condensed Matter 16, S3186 (2004)
A. Polimeni, G. Baldassarri, M. Bissiri, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
”Role of hydrogen in III-N-V compound semiconductors”, in
Semiconductors Science and Technology 17, 797 (2002)
R. Trotta, A. Polimeni, and M. Capizzi
”Hydrogen-induced defect engineering in dilute nitride semiconductors”
Physica Status Solidi C, 6 2644 (2009)


Publications of Antonio Polimeni
(Source ISI Web of Science)
Antonio Polimeni coauthored 232 articles published in peer-reviewed journals (199) and conference proceedings (33). These articles were cited 4110 times resulting in an h index equal to 34 (source Google Scholar)
All papers are listed in the following pages.







Publications in International refereed journals
2017
199. Marta De Luca, Silvia Rubini, Marco Felici, Alan Meaney, Peter C. M. Christianen, Faustino Martelli, and Antonio Polimeni
“Addressing the fundamental electronic properties of wurtzite GaAs nanowires by high-field magneto-photoluminescence spectroscopy”
Nano Letters 17, (2017)
198. M. De Luca and A. Polimeni
“Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy”
Applied Physics Review 4, 041102 (2017) invited paper
197. H. A. Fonseka, A. S. Ameruddin, P. Caroff, D. Tedeschi, M. De Luca, F. Mura, Y. Guo, M. Lysevych, F. Wang, H. H. Tan, A. Polimeni, C. Jagadish
“InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range”
Nanoscale 9, 13554 (2017)
196. Michele B. Rota, Amira S. Ameruddin, Jennifer Wong-Leung, Abderrezak Belabbes, Qiang Gao, Antonio Miriametro, Francesco Mura, Hark Hoe Tan, Antonio Polimeni, Friedhelm Bechstedt, Chennupati Jagadish, Mario Capizzi
“Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires”
The Journal of Physical Chemistry C 121, 16650 (2017)
195. G. Pettinari, A. Gerardino, L. Businaro, A. Polimeni, M. Capizzi, M. Hopkinson, S. Rubini, F. Biccari, F. Intonti, A. Vinattieri, M. Gurioli, and M Felici
“A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides”
Microelectronic Engineering 174, 16 (2017)

2016
194. Michele B Rota, Amira S Ameruddin, H Aruni Fonseka, Qiang Gao, Francesco Mura, Antonio Polimeni, Antonio Miriametro, H Hoe Tan, Chennupati Jagadish, Mario Capizzi
“Bandgap Energy of Wurtzite InAs Nanowires”
Nano Letters 16, 5197 (2016)
193. Davide Tedeschi, Marta De Luca, A Granados del Águila, Qian Gao, Gina Ambrosio, Mario Capizzi, Hark Hoe Tan, Peter CM Christianen, Chennupati Jagadish, Antonio Polimeni
“Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires”
Nano Letters 16, 6213 (2016)
192. Martyna Grydlik, Mark T Lusk, Florian Hackl, Antonio Polimeni, Thomas Fromherz, Wolfgang Jantsch, Friedrich Schäffler, Moritz Brehm
“Laser Level Scheme of Self-Interstitials in Epitaxial Ge Dots Encapsulated in Si”
Nano Letters 16, 6802 (2016)
191. Davide Tedeschi, Marta De Luca, H Aruni Fonseka, Qian Gao, Francesco Mura, Hark Hoe Tan, Silvia Rubini, Faustino Martelli, Chennupati Jagadish, Mario Capizzi, Antonio Polimeni
“Long-Lived Hot Carriers in III–V Nanowires”
Nano Letters 16, 3085 (2016)
190. Antonio Di Trolio, Paola Alippi, Elvira Maria Bauer, G Ciatto, MH Chu, Gaspare Varvaro, Antonio Polimeni, Mario Capizzi, Matteo Valentini, Fabrizio Bobba, Cinzia Di Giorgio, Aldo Amore Bonapasta
“Ferromagnetism and conductivity in hydrogen irradiated Co-doped ZnO thin films”
ACS applied materials & interfaces 8, 12925 (2016)
189. M. Valentini, C. Malerba, F. Menchini, D. Tedeschi, A. Polimeni, M. Capizzi, and A. Mittiga
“Effect of the order-disorder transition on the optical properties of Cu2ZnSnS4”
Applied Physics Letters 108, 211909 (2016)

2015
188. S. Birindelli, M. Kesaria, D. Giubertoni, G. Pettinari, A. V. Velichko, Q. D. Zhuang, A. Krier, A. Patanè, A. Polimeni, and M. Capizzi
“Peculiarities of the hydrogenated In(AsN) alloy”
Semiconductor Science and Technology 30, 105030 (2015)
187. E. Giulotto, M. Geddo, M. Patrini, G. Guizzetti, M. Felici, M. Capizzi, A. Polimeni, F. Martelli, and S. Rubini
“H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures”
Journal of Applied Physics 116, 245304 (2015)
186. G. Pettinari, F. Filippone, A. Polimeni, G. Mattioli, A. Patanè, V. Lebedev, M. Capizzi, and A. Amore Bonapasta
“Genesis of "solitary Cations" Induced by Atomic Hydrogen”
Advanced Functional Materials 25, 5353-5359 (2015)
185. G. Pettinari, M. Capizzi, and A. Polimeni
“Carrier masses and band-gap temperature sensitivity in Ga(AsBi) alloys”
Semiconductor Science and Technology 30, 094002 (2015)
184. Attilio Zilli, Marta De Luca, Davide Tedeschi, H. Aruni Fonseka, Antonio Miriametro, Hark Hoe Tan, Chennupati Jagadish, Mario Capizzi, and Antonio Polimeni
“Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires”
ACS Nano 9, 4277-4287 (2015)
183. Marta De Luca, Attilio Zilli, H. Aruni Fonseka, Sudha Mokkapati, Antonio Miriametro, Hark Hoe Tan, Leigh Morris Smith, Chennupati Jagadish, Mario Capizzi, and Antonio Polimeni
“Polarized Light Absorption in Wurtzite InP Nanowire Ensembles”
Nano Letters, 15, 998 (2015)
182. G. Ciatto, G. Pettinari, N. Balakrishnan, F. Berenguer, A. Patanè, S. Birindelli, M. Felici,and A. Polimeni
“Synchrotron x-ray diffraction study of micro-patterns obtained by spatially selective hydrogenation of GaAsN”
Applied Physics letters 106, 051905 (2015)
181. A. V. Velichko, A. Patanè, M. Capizzi, I. C. Sandall, D. Giubertoni, O. Makarovsky, A. Polimeni, A. Krier, Q. Zhuang, and C. H. Tan
“H-tailored surface conductivity in narrow band gap In(AsN)”
Applied Physics Letters 106, 022111 (2015)

2014
180. M. De Luca, A. Polimeni, H. A. Fonseka, A. J. Meaney, P. C. M. Christianen, J. C. Maan, S. Paiman, H. H. Tan, F. Mura, C. Jagadish, and M. Capizzi
“Magneto-optical properties of wurtzite-phase InP nanowires”
Nano Letters 14, 4250 (2014)
179. M. Felici, S. Birindelli, R. Trotta, M. Francardi, A. Gerardino, A. Notargiacomo, S. Rubini, F. Martelli, M. Capizzi and A. Polimeni
“Nanoscale Tailoring of the Polarization Properties of Dilute-Nitride Semiconductors via H-Assisted Strain Engineering”
Physical Review Applied 2, 064007 (2014)
178. E. Giulotto, M. Geddo, M. Patrini, G. Guizzetti, M. Felici, M. Capizzi, A. Polimeni, F. Martelli, and S. Rubini
“H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/ GaAs1-xNx:H planar heterostructures”
Journal of Applied Physics 116, 245304 (2014)
177. Simone Birindelli, Marco Felici, Johannes S. Wildmann, Antonio Polimeni, Mario Capizzi, Annamaria Gerardino, Silvia Rubini, Faustino Martelli, Armando Rastelli, and Rinaldo Trotta
“Single photons on demand from novel site-controlled GaAsN/GaAsN:H quantum dots”
Nano Letters 14, 1275 (2014)
176. L. Amidani, G. Ciatto, F. Boscherini, F. Filippone, G. Mattioli, P. Alippi, F. Bondino, A. Polimeni, M. Capizzi, and A. Amore Bonapasta
“Connections between local and macroscopic properties in solids: The case of N in III-V-N alloys”
Physical Review B 89, 085301 (2014)
175. G. Pettinari, M. Felici, R. Trotta, M. Capizzi, and A. Polimeni
“Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring”
Journal of Applied Physics 115, 012011 (2014)

2013
174. Marta De Luca, Antonio Polimeni, Mario Capizzi, Alan J. Meaney, Peter C. M. Christianen, Jan Kees Maan, Francesco Mura, Silvia Rubini, and Faustino Martelli
“Determination of Exciton Reduced Mass and Gyromagnetic Factor of Wurtzite (inGa)As Nanowires by Photoluminescence Spectroscopy under High Magnetic Fields”
ACS Nano 7, 10717 (2013)
173. Marta De Luca, Antonio Polimeni, Marco Felici, Antonio Miriametro, Mario Capizzi, Francesco Mura, Silvia Rubini, and Faustino Martelli
“Excitonic recombination and absorption in InxGa1-xAs/GaAs heterostructure nanowires”
Physical Review B 87, 235304 (2013)
172. G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Patanè, T. Tiedje
“Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states”
Physica Status Solidi B 250, 779 (2013)
171. Marta De Luca, Antonio Polimeni, Marco Felici, Antonio Miriametro, Mario Capizzi, Francesco Mura, Silvia Rubini, and Faustino Martelli
“Resonant depletion of photogenerated carriers in InGaAs/GaAs nanowire mats”
Applied Physics Letters 102, 173102 (2013)
170. N. V. Kozlova, G. Pettinari, O. Makarovsky, N. Mori, A. Polimeni, M. Capizzi, Q. D. Zhuang, A. Krier, and A. Patanè
“Nonresonant hydrogen dopants in In(AsN): A route to high electron concentrations and mobilities”
Physical Review B 87, 165207 (2013)
169. D. Dagnelund, C. W. Tu, A. Polimeni, M. Capizzi, W. M. Chen and I. A. Buyanova
Effect of thermal annealing on defects in post-growth hydrogenated GaNP”
Physica Status Solidi (C) 10, 561 (2013)
168. M. Felici, A. Polimeni, G. Lavenuta, E. Tartaglini, M. De Luca, M. Capizzi, A. Notargiacomo, R. Carron, D. Fekete, P. Gallo, B. Dwir, A. Rudra, E. Kapon, G. Pettinari, P. C. M. Christianen, and J. C. Maan
“Effects of hydrogen irradiation on the optical and electronic properties of site-controlled InGaAsN V-groove quantum wires”
Physica Status Solidi (C) 10, 556 (2013)

2012
167. A. F. Qasrawi, K. F. Ilaiwi, and A. Polimeni
“Hydrogen implantation effects on the electrical and optical properties of InSe thin films“
Turkish Journal of Physics 36, 385 (2012)
166. G. Pettinari, A. Patanè, A. Polimeni, M. Capizzi, X. F. Lu, and T. Tiedje
“Effects of hydrogen on the electronic properties of Ga(AsBi) alloys”
Applied Physics Letters 101, 222103 (2012).
165. M. De Luca, G. Pettinari, G. Ciatto, L. Amidani, F. Filippone, A. Polimeni, E. Fonda, F. Boscherini, A. Amore Bonapasta, D. Giubertoni, A. Knübel, V. Lebedev, and M. Capizzi
“Identification of four-hydrogen complexes in In-rich InxGa1−xN (x>0.4) alloys using photoluminescence, x-ray absorption, and density functional theory”
Physical Review B Rapid Communication 86, 201202 (2012)
164. L. Wen, M. Stavola, W. B. Fowler, R. Trotta, A. Polimeni, M. Capizzi, G. Bisognin, M. Berti, S. Rubini, and F. Martelli
“Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs1−yNy alloys: Role of N-Hn centers with n>2 and their thermal stability”
Physical Review B 86, 085206 (2012)
163. Marco Felici, Antonio Polimeni, Elena Tartaglini, Andrea Notargiacomo, Marta De Luca, Romain Carron, Dan Fekete, Benjamin Dwir, Alok Rudra, Mario Capizzi, and Eli Kapon
“Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires”
Applied Physics Letters 101, 151114 (2012)
162. S. Frabboni, V. Grillo, G. C. Gazzadi, R. Balboni, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini, G. Guzzinati, and F. Glas
“Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures”
Applied Physics Letters 101, 111912 (2012)
162. N. Balakrishnan, G. Pettinari, O. Makarovsky, L. Turyanska, M. W. Fay, M. De Luca, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini, and A. Patanè
“Band-gap profiling by laser writing of hydrogen-containing III-N-Vs”
Physical Review B 86, 155307 (2012)
161. M. Geddo, E. Giulotto, M. S. Grandi, M. Patrini, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, and S. Rubini
“An all optical mapping of the strain field in GaAsN/GaAsN:H wires”
Applied Physics Letters 101, 191908 (2012)
160. Marco Felici, Giorgio Pettinari, Romain Carron, Giovanna Lavenuta, Elena Tartaglini, Antonio Polimeni, Dan Fekete, Pascal Gallo, Benjamin Dwir, Alok Rudra, Peter C. M. Christianen, Jan C. Maan, Mario Capizzi, and Eli Kapon
“Magneto-optical properties of single, site-controlled InGaAsN quantum wires grown on pre-patterned GaAs substrates”
Physical Review B 85, 155319 (2012)
159. R. Trotta, A. Polimeni, and M. Capizzi
“Hydrogen incorporation in III-N-V semiconductors: From macroscopic to nanometre control of the material physical properties”
Advanced Functional Materials 22, 1782 (2012)
158. G. Pettinari, A. Patanè, A. Polimeni, M. Capizzi, Xianfeng Lu, and T. Tiedje
“Bi-induced p-type conductivity in nominally undoped Ga(AsBi)“
Applied Physics Letters 100, 092109 (2012)
157. D. Dagnelund, I. P. Vorona, G. Nosenko, X. J. Wang, C. W. Tu, H. Yonezu, A. Polimeni, M. Capizzi, W. M. Chen, and I. A Buyanova
“Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study “
Journal of Applied Physics 111, 023501 (2012)

2011
155. M. Shafi, R. H. Mari, A. Khatab, M. Henini, A. Polimeni, M. Capizzi, and M. Hopkinson
“Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy”
Journal of Applied Physics 110, 124508 (2011)
154. J. Alvarez and J.-P. Kleider R. Trotta, A. Polimeni, M. Capizzi F. Martelli and L. Mariucci, and S. Rubini
“Giant and reversible enhancement of the electrical resistance of GaAs1-xNx by hydrogen irradiation”
Physical Review B 84, 085331 (2011)
153. Y. Puttisong, D. Dagnelund, I. A. Buyanova, C. W. Tu, A. Polimeni, M. Capizzi, and W. M. Chen
“Room Temperature Spin Filtering Effect in GaNAs: Role of Hydrogen”
Applied Physics Letters 99, 152109 (2011)
152. N. Balakrishnan, A. Patanè, O. Makarovsky, A. Polimeni, M. Capizzi, F. Martelli, and S. Rubini
“Laser writing of the electronic activity of – and H-atoms in GaAs”
Applied Physics Letters 99, 021105 (2011)
151. R. Trotta, A. Polimeni, F. Martelli, G. Pettinari, M. Capizzi, L. Felisari, S. Rubini, M. Francardi, A. Gerardino, P. C. M. Christianen, and J. C. Maan
“Fabrication of Site-Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures”
Advanced Materials 23, 2706 (2011)
150. M. Geddo, M. Patrini, G. Guizzetti, M. Galli, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, and S. Rubini
“Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures”
Journal of Applied Physics 109, 123511 (2011)
149. G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, and T. Tiedje
“Compositional evolution of Bi-induced acceptor states in GaAs1-xBix alloy”
Physical Review B 83, 201201 (2011)
148. R. Trotta, A. Polimeni, and M. Capizzi
“Hydrogen-mediated nanostructuring of dilute nitride semiconductors”
Physica Status Solidi B-basic solid state physics 248, 1195 (2011)
147. D. Dagnelund, X. J. Wang, C. W. Tu, A. Polimeni, M. Capizzi, W. M. Chen, and I. A. Buyanova
“Effect of postgrowth hydrogen treatment on defects in GaNP”
Applied Physics Letters 98, 141920 (2011)

2010
146. R. Trotta, L. Cavigli, L. Felisari, A. Polimeni, A. Vinattieri, M. Gurioli, M. Capizzi, F. Martelli, S. Rubini, L.
Mariucci, M. Francardi, and A. Gerardino
“Quantum confinement effects in hydrogen-intercalated GaAs1-xNx/GaAsN:H heterostructures investigated by photoluminescence spectroscopy”
Physical Review B 81, 235327 (2010)
145. G. Pettinari, A. Polimeni, J. H. Blokland, R. Trotta, P. C. M. Christianen, M. Capizzi, J. C. Maan, X. Lu, E. C.
Young, and T. Tiedje
“Compositional dependance of the exciton reduced mass in GaAs1-xBix (x=0-10%)”
Physical Review B 81, 235211 (2010)

144. L. Wen, F. Bekisli, M. Stavola, W. B. Fowler, R. Trotta, A. Polimeni, M. Capizzi, S. Rubini, and F. Martelli
“Detailed structure of the H-N-H center in GaAs1-yNy revealed by vibrational spectroscopy under uniaxial stress”
Physical Review B 81, 233201 (2010)

2009
143. R. Trotta, A. Polimeni, and M. Capizzi
”Hydrogen-induced defect engineering in dilute nitride semiconductors”
Physica Status Solidi C, 6 2644 (2009) invited paper
142. R. Trotta, D. Giubertoni, A. Polimeni, M. Bersani, M. Capizzi, F. Martelli, S. Rubini, G. Bisognin, and M. Berti
”Hydrogen diffusion in GaAs1−xNx”
Physical Review B 80, 195206 (2009)
141. R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini, M. Francardi, A. Gerardino, and L. Mariucci
”Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures”
Applied Physics Letters 94, 261905 (2009)
140. G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, V. Lebedev, V. Cimalla, and O. Ambacher
”Carrier mass measurements in degenerate indium nitride”
Physical Review B 79, 165207 (2009)
139. G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, M. Capizzi, M. Berti, G. Bisognin, D. De Salvador, L. Floreano, F. Martelli, S. Rubini, and L. Grenouillet
”Local structure of nitrogen-hydrogen complexes in dilute nitrides”
Physical Review B 79, 165205 (2009)
138. E. P. O’Reilly, A. Lindsay, P. J. Klar, A. Polimeni, ad M. Capizzi
”Trends in the electronic structure of dilute nitride alloys”
Semiconductor Science and Technology 24, 033001 (2009)




2008
137. L. Felisari, V. Grillo, F. Martelli, R. Trotta, A. Polimeni, M. Capizzi, F. Jabeen, and L. Mariucci
”In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN:H heterostructures”
Applied Physics Letters 93, 102116 (2008)
136. S. Sanguinetti, M. Guzzi, E. Grilli, M. Gurioli, L. Seravalli, P. Frigeri, S. Franchi, M. Capizzi, S. Mazzuccato, and A. Polimeni
”Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots”
Physical Review B 78, 085313 (2008)
135. G. Pettinari, A. Polimeni, M. Capizzi , J. Bockland , P. Christianen , J. C. Maan , E. Young, and T. Tiedje
”Influence of bismuth incorporation on the valence and conduction band edges of GaAs1-xBix”
Applied Physics Letters 92, 262105 (2008)
134. R. Trotta, A. Polimeni, M. Capizzi, D. Giubertoni, M. Bersani, G. Bisognin, M. Berti, S. Rubini, F. Martelli, L. Mariucci, M. Francardi, and A. Gerardino
”Effect of hydrogen incorporation temperature in in-plane engineered GaAsN/GaAsN:H heterostructures”
Applied Physics Letters 92, 221901 (2008)
133. K. Hantke, S. Horst, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Ruehle, F. Masia, G. Pettinari, A. Polimeni, and M. Capizzi
”Zero-phonon lines of nitrogen-cluster states in GaNxAs1-x: H identified by time-resolved photoluminescence”
Journal of Materials Science 43, 4344 (2008)
132. A. Polimeni, F. Masia, G. Pettinari, R. Trotta, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, and P. J. Klar
”Role of strain and properties of N clusters at the onset of the alloy limit in GaAs1-xNx”
Physical Review B 77, 155213 (2008)
131. G. Pettinari, F. Masia, M. Capizzi, A. Polimeni, M. Losurdo, G. Bruno, T.H. Kim, S. Choi, A. Brown, V. Lebedev, V. Cimalla, O. Ambacher
” Experimental evidence of different hydrogen donors in n-type InN”
Physical Review B 77, 125207 (2008)
130. G. Bisognin, D. De Salvador, E. Napolitani, M. Berti, A. Polimeni, M. Capizzi, S. Rubini, F. Martelli, A. Franciosi
” High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides”
Journal of Applied Crystallography 41, 366 (2008)
129. S. Kleekajai, F. Jiang, K. Colon, M. Stavola, W. B. Fowler, K. R. Martin, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin, C. W. Tu, G. Bais, S. Rubini, and F. Martelli
”Vibrational properties of the H-N-H complex in dilute III-N-V alloys: Infrared spectroscopy and density functional theory”
Physical Review B 77, 085213 (2008)
128. A. Polimeni, G. Pettinari, R. Trotta, F. Masia, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, P. J. Klar, F. Martelli, and S. Rubini
”Photoluminescene under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN“
Physica Status solidi A-Applications and Materials Science 205, 107 (2008)

2007
127. G. Bisognin, D. De Salvador, E. Napolitani, M. Berti, A. Polimeni, M. Felici, M. Capizzi, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, A. Franciosi
“Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction”
Physica Status Solidi A: Applications and Materials Science 204, 2766 (2007)
126. F. Boscherini, M. Malvestuto, G. Ciatto, F. D'Acapito, G. Bisognin, D. De Salvador, M. Berti, M. Felici, A. Polimeni, Y. Nabetani
“X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers”
Journal of Physics- Condensed Matter 19, 446201 (2007)

125. Marina Berti, Gabriele Bisognin, Davide De Salvador, Enrico Napolitani, and Silvia Vangelista, Antonio Polimeni, Mario Capizzi, Federico Boscherini, Gianluca Ciatto, Silvia Rubini, Faustino Martelli, and Alfonso Franciosi
”Formation and dissolution of D-N complexes in dilute nitrides”
Physical Review B 76, 205323 (2007)
124. Maria Losurdo, Maria M. Giangregorio, and Giovanni Bruno Tong-Ho Kim, Soojeong Choi, April S. Brown Giorgio Pettinari, Mario Capizzi, and Antonio Polimeni
”Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry”
Applied Physics Letters 91, 081917 (2007)
123. S. Kleekajai, K. Colon, M. Stavola, W. B. Fowler, K. R. Martin, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin, and C. W. Tu
”Vibrational spectroscopy of hydrogenated GaP1-yNy”
Physica B 401-402, 347 (2007)
122. G. Pettinari, A. Polimeni, F. Masia, R. Trotta, M. Felici, M. Capizzi, T. Niebling, W. Stolz, and P. J. Klar
”Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure”
Physical Review Letters 98, 146402 (2007)
121. M. Geddo, T. Ciabattoni, G. Guizzetti, M. Galli, M., Patrini, A. Polimeni, R. Trotta, M. Capizzi, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi
”Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN”
Applied Physics Letters 90, 091907 (2007)
120. M. Losurdo, M. M. Giangregorio, G. Bruno, T.-H. Kim, P. Wu, S. Choi, A. Brown, F. Masia, M. Capizzi, and A. Polimeni
”Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy”
Applied Physics Letters 90, 011910 (2007)
119. P. J. Klar, J. Teubert, M. Güngerich, T. Niebling, H. Grüning, W. Heimbrodt, K. Volz, W., Stolz, A. Polimeni, M. Capizzi, E. P. O'Reilly, A. Lindsay, M. Galluppi, L. Geelhaar, H. Riechert, and S. Tomić
”Hydrostatic pressure experiments on dilute nitride alloys”
Physica Status Solidi (B) 244, 24 (2007)

2006
118. G. Pettinari, F. Masia, A. Polimeni, M. Felici, A. Frova, M. Capizzi, A. Lindsay, E. P. O'Reilly, P. J. Klar, W. Stolz, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi,
“Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs1-xNx”
Physical Review B, 74, 245202 (2006)
117. M. Gurioli, M. Zamfirescu, A. Vinattieri, S. Sanguinetti, E. Grilli, M. Guzzi, S. Mazzucato, A. Polimeni, M. Capizzi, L. Serevalli, P. Frigeri, and S. Franchi
“Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures”
Journal of Applied Physics, 100, 84313 (2006)
116. M. Güngerich, P. J. Klar, W. Heimbrodt, K. Stolz, K. Volz, K. Köhler, J. Wagner, A. Polimeni, and M. Capizzi
“Correlation of band formation and local vibrational mode structure in Ga0.95Al0.05As1-xNx with 0x0.03”
Physica Status Solidi C 3, 619 (2006)
115. G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, and M. Capizzi
“C2v nitrogen-hydrogen complexes in GaAsN revealed by X-ray absorption near-edge spectroscopy and ab initio simulations”
Physica Status Solidi C 3, 1836 (2006)
114. M. Felici, A. Polimeni, G. Salviati, L. Lazzarini, N. Armani, F. Masia, M. Capizzi, F. Martelli, M. Lazzarino, G. Bais, M. Piccin, S. Rubini, A. Franciosi
”In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors”
Advanced Materials 18, 1993 (2006)
113. M. Felici, R. Trotta, F. Masia, A. Polimeni, A. Miriametro, M. Capizzi, P. J. Klar, W. Stolz
”Compositional disorder in GaAs1-xNx:H investigated by photoluminescence”
Physical Review B 74, 85203 (2006)
112. G. Bisognin, D. De Salvador, A. V. Drigo, E. Napolitani, A. Sambo, M., Berti, A. Polimeni, M. Felici, M. Capizzi, M. Güngerich, P. J. Klar, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, A. Franciosi
”Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain”
Applied Physics Letters 89, 61904 (2006)
111. S. V. Dudiy, A. Zunger, M. Felici, A. Polimeni, M. Capizzi, H. P. Xin, and C. W. Tu
”Nitrogen-induced perturbation of the valence band states in GaP1-xNx alloys”
Physical Review B 74, 155303 (2006)
110. F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S. B. Healy, E. P. O'Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, W. Stolz
“Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx”
Physical Review B 73, 073201 (2006)
109. M. Felici, A. Polimeni, M. Capizzi, Y. Nabetani, T. Okuno, K. Aoki, T. Kato, T. Matsumoto, T Hirai
“Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O”
Applied Physics Letters 88, 101910 (2006)
108. J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, M. Capizzi
“Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As)”
Physica E 32, 218 (2006)
107. I. A. Buyanova, M. Izadifard, T. Seppanen, J. Birch, W. M. Chen, S. J. Pearton, A. Polimeni, M. Capizzi, M. S. Brandt, C. Bihler, Y. G. Hong, C. W. Tu,
”Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys”
Physica B 376, 568 (2006)

2005
106. K. Hantke, J. D. Heber, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Rühle, A. Polimeni, and M. Capizzi
“Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)/GaAs quantum wells”
Applied Physics Letters 87, 252111 (2005)
105. S. Mazzucato, D. Nardin, M. Capizzi, A. Polimeni, A. Frova, L. Serravalli, and S. Franchi
“Defect passivation in strain engineered InAs/(InGa)As quantum dots”
Materials Science & Engineering C-Biomimetic ans Supramolecular Systems 25 830, (2005)
104. G. Ciatto, H. Renevier, M. G. Proietti, A. Polimeni, M. Capizzi, S. Mobilio, and F. Boscherini
“Effects of hydrogenation on the local structure of InxGa1–xAs1–yNy quantum wells and GaAs1–yNy epilayers”
Physical Review B 72, 085322 (2005)
103. G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, and M. Capizzi
“Nitrogen-hydrogen complex in GaAsxN1–x revealed by x-ray absorption spectroscopy”
Physical Review B 71, Rapid Communication 201301 (2005)
102. M. Felici, A. Polimeni, A. Miriametro, M. Capizzi, H. P. Xin, and C. W. Tu
“Free carrier and/or exciton trapping by nitrogen pairs in dilute GaP1-xNx”
Physical Review B 71, 045209 (2005)
101. G. Ciatto, F. D’Acapito, S. Sanna, V. Fiorentini, A. Polimeni, M. Capizzi, S. Mobilio, and F. Bosherini
“Comparison between experimental and theoretical determination of the local structure of the GaAs1-yNy dilute nitride alloy”
Physical Review B 71, 115210 (2005)

2004
100. A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, and M. Capizzi
” Magnetophotoluminescence studies of InxGa1-xAs1-yNy: a measurement of the electron effective mass, exciton size, and degree of carrier localization”
Journal of Physics: Condensed Matter 16, S3186 (2004)
99. M. Izadifard, I. A. Buyanova, W. M. Chen, A. Polimeni, M. Capizzi, and C. W. Tu
”Role of hydrogen in improving optical quality of GaNAs alloys”
Physica E 20, 313 (2004)
98. D. Ochoa, A. Polimeni, M. Capizzi, A. Frova, L. Seravalli, M. Minelli, P. Frigeri, and S. Franchi
”Hydrogenation of strain engineered InAs/InxGa1-xAs quantum dots”
Physica Status Solidi C 1, 581 (2004)
97. I. A. Buyanova, M. Izadifard, I. G. Ivanov, J. Birch, W. M. Chen, M. Felici, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin, and C. W. Tu
“Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1-x alloys: A proof for a general property of dilute nitrides”
Physical Review B 70, 245215, (2004)
96. M. Felici, V. Cesari, A. Polimeni, A. Frova, M. Capizzi, Y. D. Choi, B. O, Y.-M. Yu, Y. Nabetani, Y. Ito, T. Okuno, T. Kato, T. Matsumoto, T. Hirai, I. K. Sou, and W. K. Ge
“Effect of lattice ionicity on hydrogen activity in II-VI materials containing isoelectronic oxygen impurities”
IEE Proc.-Optoelectron. 151, 465 (2004)
95. A. Polimeni, M. Capizzi, Y. Nabetani, Y. Ito, T. Okuno, T. Kato, T. Matsumoto, and T. Hirai
“Temperature dependence and bowing of the bandgap in ZnSe1-xOx”
Applied Physics Letters 84, 3304 (2004)
94. A. Polimeni, F. Masia, A. Vinattieri, G. Baldassarri Hoeger von Hoegersthal, and M. Capizzi
“Single carrier localization in InxGa1-xAs1-yNy investigated by magnetophotoluminescence”
Applied Physics Letters 84, 2295 (2004)
93. F. Jiang, Michael Stavola, M. Capizzi, A. Polimeni, A. Amore Bonapasta, and F. Filippone
“Vibrational spectroscopy of hydrogenated GaAs1-yNy: A structure-sensitive test of an H2*(N) model”
Physical Review B 69, Rapid Communication 041309 (2004)
92. A. Polimeni, G. Baldassarri Hoeger von Hoegersthal, F. Masia, A. Frova, M. Capizzi, Simone Sanna, Vincenzo Fiorentini, P. J. Klar, and W. Stolz
“Tunable variation of the electron effective mass and exciton radius in hydrogenated GaAs1-xNx”
Physical Review B 69, Rapid Communication 041201 (2004)
91. A. Polimeni, F. Masia, G. Baldassarri Hoeger von Hoegersthal, ,A. Frova, M. Capizzi, S. Sanna, V. Fiorentini, P. J. Klar, and W. Stolz
“Tuning of the electron effective mass and exciton wavefunction size in GaAs1-xNx”
Physica E 21, 747 (2004)

2003
90. A. Polimeni, F. Masia, M. Felici, G. B. H. von Hogerstal, M. Bissiri, A. Frova, M. Capizzi, P. J. Klar, W. Stolz, I. A. Buyanova, W. M. Chen, H. P. Xin, ans C. W. Tu
“Hydrogen-related effects in diluted nitrides”
Physica B 340, 371 (2003)
89. A. Polimeni, G. Ciatto, L. Ortega, F. Jiang, F. Boscherini, F. Filippone, A. Amore Bonapasta, M. Stavola, and M. Capizzi
“Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys”
Physical Review B 68, 085204 (2003)
88. M. Geddo, G. Guizzetti, M. Capizzi, A. Polimeni, D. Gollub, and A. Forchel
“Photoreflectance evidence of the N-induced increase of the exciton binding energy in an InxGa1-xAs1-yNy alloy”
Applied Physics Letters 83, 470 (2003)
87. G. Baldassarri Höger von Högersthal, A. Polimeni, F. Masia, M. Bissiri, and M. Capizzi, D. Gollub, M. Fischer, and A. Forchel
“Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures”
Physical Review B 67, 233304 (2003)
86. A. Polimeni, M. Bissiri, M. Felici, M. Capizzi, I. A. Buyanova, W. M. Chen, H. P. Xin, and C. W. Tu
“Nitrogen passivation induced by atomic hydrogen: The GaP1-yNy case”
Physical Review B 67, Rapid Communication 201303 (2003)
85. F. Masia, A. Polimeni, G. Baldassarri H. V. H., M. Bissiri, M. Capizzi, P. J. Klar,and W. Stolz
“Early manifestation of localization effects in diluted Ga(AsN)”
Applied Physics Letters 82, 4474 (2003)
84. I. A. Buyanova, M. Izadifard, W. M. Chen, A. Polimeni, M. Capizzi, H. P. Xin, and C. W. Tu
“Hydrogen-induced improvements in optical quality of GaNAs alloys”
Applied Physics Letters 82, 3662 (2003)
83. A. Vinattieri, D. Alderighi, M. Zamfirescu, M. Colocci, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, and A. Forchel
“Role of the host matrix in the carrier recombination of InGaAsN alloys”
Applied Physics Letters 82, 2805 (2003)
82. P. J. Klar, H. Gruning, M. Gungerich, W. Heimbrodt, J. Koch, T. Torunski, W. Stolz, A. Polimeni, and Capizzi
“Global changes of the band structure and the crystal lattice of Ga(N,As) due to hydrogenation”
Physical Review B 67, Rapid Communication 121206 (2003)
81. D. Ochoa, A. Polimeni, M. Capizzi, A. Patane, M. Henini, L. Eaves, and P. C. Main PC
“Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruption”
Journal of Crystal Growth 251, 192 (2003)
80. P. J. Klar, H. Gruning, L. Chen, T. Hartmann, D. Golde, M. Gungerich, W. Heimbrodt, J. Koch, K. Volz, B. Kunert, T. Torunski, W. Stolz, A. Polimeni, M. Capizzi, G. Dumitras, L. Geelhaar, and H. Riechert
“Unusual properties of metastable (Ga,In)(N,As) containing semiconductor structures”
IEE Proceedings-Optoelectronics 150, 28 (2003)
79. A. Polimeni, M. Bissiri, G. Baldassarri Höger von Högersthal, M. Capizzi, D. Giubertoni, M. Barozzi, M. Bersani, D. Gollub, M. Fischer, and A. Forchel
”Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures”
Solid State Electronics 47, 447 (2003)
78. A. Vinattieri, D. Alderighi, M. Zamfirescu, M. Colocci, A. Polimeni, M. Capizzi, D. Gollub, M.Fischer, A. Forchel
”Exciton Dynamics in InGaAsN/GaAs heterostructures”
Physica Status Solidi (a) 195, 558 (2003)
77. G. Ciatto, F. Boscherini, F. D’Acapito, S. Mobilio, G. Baldassarri H. V. H., A. Polimeni, M. Capizzi, D. Gollub, and A. Forchel
”Atomic ordering in (InGa)(AsN) quantum wells: An In K-edge X-ray absorption investigation”
Nuclear Instruments and Methods in Physics Research B 200, 34 (2003)

2002
76. A. Amore Bonapasta, F. Filippone, P. Giannozzi, M. Capizzi, and A. Polimeni
”Structure and passivation effects of mono- and dihydrogen complexes in GaAs1-yNy”
Physical Review Letters 89, 216401 (2002)
75. M.Geddo, R. Pezzuto, M. Capizzi, A. Polimeni, D. Gollub, M. Fischer, A. Forchel
”Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures”
European Physical Journal B 30, 39 (2002)
74. G. Baldassarri Höger von Högersthal, M. Bissiri, F. Ranalli, V. Gaspari, A. Polimeni, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, A. Forchel
”Reversibility of the effects of hydrogen on the electronic properties of InxGa1-xAs1-yNy”
Physica E 13, 1082 (2002)
73. A. Polimeni, A. Patanè, R. K. Hayden, L. Eaves, M. Henini, P. C. Main, K. Uchida, N. Miura, J. Main, and G. Wurner
”Linewidth broadening of excitonic luminescence from quantum wells in pulsed magnetic fields”
Physica E 13, 349 (2002)

72. M. Bissiri, G. Baldassarri, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, M. Reinhardt, and A. Forchel
”Role of N clusters in InxGa1-xAs1-yNy band-gap reduction”
Physical Review B 66, 033311 (2002)
71. A. Polimeni, G. Baldassarri, M. Bissiri, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
”Role of hydrogen in III-N-V compound semiconductors”
Semiconductors Science and Technology 17, 797 (2002)
70. M. Bissiri, G. Baldassarri, A. Polimeni,V. Gaspari, F. Ranalli, M. Capizzi, A. Amore Bonapasta, F. Jiang, M. Stavola, D. Gollub, M. Fischer, and A. Forchel
”Hydrogen-induced passivation of nitrogen in GaAs1-yNy“
Physical Review B 65, 235210 (2002)
69. M. Bissiri, V. Gaspari, G. Baldassarri, F. Ranalli, A. Polimeni, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
”Nitrogen-related complexes in Ga(AsN) and their interaction with hydrogen”
Physica Status Solidi a 190, 651 (2002)
68. M. Henini, A. Patanè, A. Polimeni, A. Levin, L. Eaves, P. C. Main, and G. Hill
”Electrical and optical properties of self-assembled quantum dots”
Microelectronics Journal 33, 313 (2002)
67. A. Polimeni, M. Bissiri, A. Augieri, G. Baldassarri, , M. Capizzi, D. Gollub, M. Fischer, M. Reinhardt, and A. Forchel
”Reduced temperature dependence of the band gap in GaAs1-yNy investigated with photoluminescence”
Physical Review B 65, 235325 (2002)
2001
66. A. Levin, A. Patanè, F. Schindler, A. Polimeni, L. Eaves, P. C. Main, M. Henini
“Piezoelectric effects on the electron-hole dipole in In0.5Ga0.5As/GaAs self-assembled quantum dots”
Physica Status Solidi (b) 224, 37 (2001)
65. A. Patanè, A. Levin, A. Polimeni, L. Eaves, P. C. Main, and M. Henini
“Universality of the Stokes shift for a disordered ensemble of quantum dots”
Physica Status Solidi (b) 224 41 (2001)
64. A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
“Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells”
Physical Review B 63, 195320 (2001)
63. A. Polimeni, G. Baldassarri H. V. H., M. Bissiri, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel
“Effect of hydrogen on the electronic properties of InxGa1-xAs1-yNy/GaAs quantum wells”
Physical Review B 63, Rapid Communication 201304 (2001)
62. G. Baldassarri H. V. H., M. Bissiri, A. Polimeni, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel
“Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells”
Applied Physics Letters 78, 3472 (2001)
61. T. Surkova, A. Patanè, L. Eaves, P. C. Main, M. Henini, A. Polimeni, A. P. Knights and C. Jeynes
“Indium inter-diffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots”
Journal of Applied Physics 89, 6044 (2001)
60. M. Henini, A. Patanè, A. Polimeni, L. Eaves, P. C. Main, A. Levin, and G. Hill
“Optical properties and laser applications of (InGa)As/(AlGa)As self-assembled quantum dots”
Japanese Journal of Applied Physics part 1, 40 (3B), 2077 (2001)
59. M. Bissiri, V. Gaspari, A. Polimeni, G. Baldassarri Hoegerstal von Hoegersthal, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
“High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells”
Applied Physics Letters 79, 2585 (2001)
58. M. Bissiri, V. Gaspari, G. Baldassarri, F. Ranalli, A. Polimeni, M. Capizzi, A. Nucara, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
“Effect of hydrogen on the electronic properties of GaAs1-yNy heterostructures”
Acta Physica Polonica A 100, 365 (2001)


57. G. Baldassarri, F. Ranalli, M. Bissiri, V. Gaspari, A. Polimeni, M. Capizzi, A. Nucara, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
“Hydrogen tuning of (InGa)(AsN) optical properties”
Acta Physica Polonica A 100, 373 (2001)
56. A. Polimeni, G. Baldassarri, M. Bissiri, V. Gaspari, F. Ranalli, M. Capizzi, A. Frova, A. Miriametro, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
”Interplay of nitrogen and hydrogen in InxGa1-xAs1-yNy/GaAs heterostructures”
Physica B 308, 850 (2001)

2000
55. A. Polimeni, A. Patanè, M. Henini, L. Eaves, P. C. Main, and G. Hill
“Carrier hopping in InAs/AlyGa1-yAs quantum dot heterostructures: Effects on optical and laser properties”
Physica E 7, 452 (2000)
54. A. Patanè, A. Polimeni, L. Eaves, M. Henini, P.C. Main, P.M. Smowton, E.J. Johnston, P.J. Hulyer E. Herrmann, G. M. Lewis, and G. Hill
“Experimental studies of the multimode spectral emission in quantum dot lasers”
Journal of Applied Physics 87, 1943 (2000)
53. S. Sanguinetti, G. Chiantoni, A. Miotto, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, A. Patanè, L. Eaves, and P. C. Main
“Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case”
Micron 31, 309 (2000)
52. A. Patanè, A. Polimeni, L. Eaves, P. C. Main, M. Henini, A. E. Belyaev, Yu. V. Dubrovskii, P. N. Brounkov, E. E. Vdovin, Yu. N. Khanin, and G. Hill
“Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots”
Journal of Applied Physics 88, 2005 (2000)
51. A. Patanè, A. Polimeni, L. Eaves, P. C. Main, M. Henini, A. E. Belyaev, Yu. V. Dubrovskii, P. N. Brounkov, E. E. Vdovin, Yu. N. Khanin, and G. Hill
“Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well“
Physical Review B 62, 13595 (2000)
50. A. Patanè, A. Levin, A. Polimeni, L. Eaves, P. C. Main, M. Henini, and G. Hill
“Carrier thermalization within a disordered ensemble of self-assembled quantum dots”
Physical Review B 62, 11084 (2000)
49. A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
“Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells”
Applied Physics Letters 77, 2870 (2000)
48. A. Patanè, A. Levin, A. Polimeni, F. Schindler, L. Eaves, P. C. Main, and M. Henini
“Piezoelectric effects in In0.5Ga0.5As self-assembled quantum dots grown on (311)B GaAs substrates”
Applied Physics Letters 77, 2979 (2000)
47. L. Artús, R. Cuscó, S. Hernández, A. Patanè, A. Polimeni, M. Henini, and L. Eaves
“Quantum-dot phonons in self-assembled InAs/GaAs quantum dots: Dependence on the coverage thickness”
Applied Physics Letters 77, 3556 (2000)
46. T. P. Surkova, P. Kaczor, A. J. Zakrzewski, K. Swiatek, V. Y. Ivanov, M. Godlewski, A. Polimeni, L. Eaves, W. Giriat
“Optical properties of ZnSe, ZnCdSe and ZnSSe alloys doped with iron”
Journal of Crystal Growth 214, 576 (2000)
45. S. Sanguinetti, G. Chiantoni, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, A. Patanè, L. Eaves, and P. C. Main
“3D island nucleation behaviour on high index substrates”
Materials Science and Engineering B-Solid State Materials for Advanced Technology 74, 239 (2000)

1999
44. A. Patanè, A. Polimeni, L. Eaves, P. C. Main, R. K. Marshall, M. Henini, Yu. V. Dubrovskii, A. E. Belyaev, and G. Hill
“Carrier dynamics in double barrier diodes incorporating quantum dots”
Physica B 272, 21 (2000)
43. A. Patanè, A. Polimeni, M. Henini, L. Eaves, P. C. Main and G. Hill
“Thermal effects in quantum dot lasers”
Journal of Applied Physics 85, 625 (1999)
42. A. Polimeni, A. Patanè, M. Henini, L. Eaves, and P. C. Main
“Temperature dependence of the optical properties of InAs/AlyGa1-yAs self-organized quantum dots”
Physical Review B 59, 5064 (1999)
41. S. G. Lyapin, I. E. Itskevich, I. A. Trojan, P. C. Klipstein, A. Polimeni, L. Eaves, P. C. Main, M. Henini
“Pressure-induced -X crossover in self-assembled In(Ga)As/GaAs quantum dots”
Physica Status Solidi (b) 211, 79 (1999)
40. A. Patanè, M. Henini, A. Polimeni, L. Eaves, P. C. Main, M. Al-Khafaji and A. G. Cullis
“Luminescence tuning of InAs/GaAs quantum dots grown on high-index planes”
Superlattices and Microstructures 25, 113 (1999)
39. A. Polimeni, A. Patanè, M. Henini, L. Eaves, P. C. Main, S. Sanguinetti and M. Guzzi
“Influence of high-index GaAs substrates on the growth of highly-strained (InGa)As/GaAs heterostructures”
Journal of Crystal Growth 201, 276 (1999)
38. A. Patanè, A. Polimeni, M. Henini, L. Eaves, P. C. Main
“In0.5Ga0.5As quantum dot lasers grown on (100) and (311)B GaAs substrates”
Journal of Crystal Growth 201, 1139 (1999)
37. A. Polimeni, A. Patanè, A. Thornton, T. Ihn, L. Eaves, P. Main, M. Henini and G. Hill
“Optical and Resonant Tunneling Spectroscopy of Self-Assembled Quantum Dot Systems”
Japanese Journal of Applied Physics Part II: Letters 38, 535 (1999)
36. P. N. Brounkov, A. R. Kovsh, V. M. Ustinov, Y. G. Musikhin, N. N. Ledentsov, S. G. Konnikov, A. Polimeni, A. Patanè, P. C. Main, L. Eaves, and C. M. A. Kapteyn
“Emission of electrons from the ground and first excited states of self-organized InAs GaAs quantum dot structures”
Journal of Electronic Materials 28, 486 (1999)
35. M. Henini, A. Polimeni, A. Patanè, L. Eaves, P. C. Main, and G. Hill
“Effect of the substrate orientation on the self-organisation of (InGa)As/GaAs quantum dots”
Microelectronics Journal 30, 319 (1999)
34. S. Sanguinetti, A. Miotto, S. Castiglioni, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, A. Patanè, L. Eaves, and P. C. Main
“Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces”
Microelectronics Journal 30, 419 (1999)
33. A. Patanè, A. Polimeni, P.C. Main, M. Henini, and L. Eaves
“High-temperature light emission from InAs quantum dots”
Applied Physics Letters 75, 814 (1999)
32. P.M. Smowton, E.J. Johnston, S.V. Dewar, P.J. Hulyer, H.D. Summers, A. Patanè, A. Polimeni, and M. Henini
“Spectral Analysis of InGaAs/GaAs Quantum Dot Lasers”
Applied Physics Letters 75, 2169 (1999)
31. S. Sanguinetti, G. Chiantoni, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, A. Patanè, L. Eaves, and P.C. Main
“Substrate orientation dependence of island nucleation critical thickness in strained heterostructures”
Europhysics Letters 47, 701 (1999)
30. T. P. Surkova, M. Godlewski, K. Swiatek, P. Kaczor, A. Polimeni, L. Eaves, and W. Giriat
“Intra-shell transitions of 3D metal ions (Fe, Co, Ni) in II-VI wide-gap semiconductor alloys”
Physica B 274, 848 (1999)

29. M. Henini, P. N. Brounkov, A. Polimeni, S. T. Stoddart, P. C. Main, L. Eaves, A. R. Kovsh, Y. G. Musikhin, and S. G. Konnikov
“Electron and hole levels of InAs quantum dots in a GaAs matrix”
Superlattices and microstructures 25, 105 (1999)

1998
28. A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, P. C. Main, K. Uchida, R. K. Hayden, and N. Miura
“Magneto-photoluminescence and electroluminescence spectroscopy of self-assembled (InGa)As quantum dots on high index planes”
Physica E 2, 662 (1998)
27. R. K. Hayden, K. Uchida, N. Miura, A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, and P. C. Main
“High field Magnetoluminescence Spectroscopy of self-Assembled (InGa)As Quantum dots on high Index Planes”
Physica B 246, 93 (1998)
26. R. K. Hayden, K. Uchida, N. Miura, A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, and P. C. Main“Photoluminescence Spectroscopy of self-assembled (InGa)As quantum dots in high magnetic fields”
Physica B 251, 262 (1998)
25. S. T. Stoddart, A. Polimeni, M. Henini, L. Eaves, P. C. Main, R. K. Hayden, K. Uchida and N. Miura
“Spectroscopic studies of self-assembled InAs and In0.5Ga0.5As quantum dots”
Applied Surface Science 123, 366 (1998)
24. A. Patanè, M. G. Alessi, F. Intonti, A. Polimeni, M. Capizzi, F. Martelli, L. Nasi, L. Lazzarini, G. Salviati, A. Bosacchi and S. Franchi
“Self-aggregated InAs quantum dots in GaAs”
Journal of Applied Physics 83, 5529 (1998)
23. R. P. Campion, J. R. Fletcher, P. J. King, S. M. Morley, A. Polimeni and R. G. Ormson
“Helical current flow along 90 degrees twist boundaries in YBCO thin films”
Superconductors Science & Technology 11, 730 (1998)
22. S. C. Fortina, S. Sanguinetti, E. Grilli, M. Guzzi, M. Henini, A. Polimeni and L. Eaves
“InAs quantum dots grown on nonconventionally oriented GaAs substrates”
Journal of Crystal Growth 187, 126 (1998)
21. M. Capizzi, A. Frova, M. G. Alessi, A. Patanè, A. Polimeni and F. Martelli
“InxGa1-xAs/GaAs interfaces: From 2D islands to quantum dots”
Nuovo Cimento della Società Italiana di Fisica D-Condensed Matter 20, 915 (1998)
20. P. N. Brounkov, A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, P. C. Main, A. R. Kovsh, Y. G. Musikhin and S. G. Konnikov
“Electronic structure of self-assembled InAs quantum dots in GaAs matrix”
Applied Physics Letters 73, 1092 (1998)
19. A. Polimeni, M. Henini, A. Patanè, L. Eaves, P. C. Main and G. Hill
“Optical properties and device applications of (InGa)As self- assembled quantum dots grown on (311)B GaAs substrates”
Applied Physics Letters 73, 1415 (1998)
18. A. E. Belyaev, L. Eaves, P. C. Main, A. Polimeni, S. T. Stoddart, M. Henini.
“Capacitance spectroscopy of single-barrier GaAs/AlAs/GaAs structures containing InAs quantum dots”
Acta Physica Polonica A 94, 245 (1998)
17. S. Sanguinetti, S. C. Fortina, A. Miotto, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, L. Eaves
“Self-aggregation of inAs quantum dots on (N11) GaAs substrates”
Thin Solid Films 336, 9 (1998)



1997
16. A. Patanè, M. Grassi Alessi, A. Polimeni, M. Capizzi, F. Martelli, P. Borri, M. Gurioli, and M. Colocci
“Formation and relaxation of exciton-carbon acceptor complexes in GaAs”
Physical Review B 56, 3834 (1997)
15. A. Patanè, M. Grassi Alessi, F. Intonti, A. Polimeni, M. Capizzi, F. Martelli, M. Geddo, A. Bosacchi and S. Franchi
“Evolution of the optical properties of InAs/GaAs quantum dots for increasing InAs coverages”
Physica Status Solidi A-Applied Research 164, 493 (1997)
14. D. Orani, A. Polimeni, A. Patanè, M. Capizzi, F. Martelli, A. D'Andrea, N. Tomassini, P. Borri, M. Gurioli, and M. Colocci
“Binding energy and lifetime of excitons in InxGa1-xAs/GaAs quantum wells”
Physica Status Solidi A-Applied Research 164, 107 (1997)

1996
13. A. Polimeni, A. Patanè, M. Capizzi, F. Martelli, L. Nasi, and G. Salviati
“Self-aggregation of quantum dots for very thin InAs layers grown on GaAs”
Physical Review B 53, Rapid Communication 4213 (1996)
12. F. Martelli, A. Polimeni, A. Patanè, M. Capizzi, P. Borri, M. Gurioli, M. Colocci, A. Bosacchi, and S. Franchi
“Exciton localization by potential fluctuation at the interface of InGaAs/GaAs quantum wells”
Physical Review B 53, 7421 (1996)
11. P. Borri, M. Gurioli, M. Colocci, F. Martelli, M. Capizzi, A. Patanè, and A. Polimeni
“Photoinduced structures in the exciton luminescence spectrum of InGaAs/GaAs quantum well heterostructures”
Journal of Applied Physics 80, 3011 (1996)
10. A. Polimeni, A. Patanè, M. Grassi Alessi, M. Capizzi, F. Martelli, A. Bosacchi, and S. Franchi
“Stokes shift in quantum wells: Trapping versus thermalization”
Physical Review B 54, 16389 (1996)

1995
9. A. Patanè, A. Polimeni, M. Capizzi and F. Martelli
“Linewidth analysis of the photoluminescence of InxGa1-xAs/GaAs quantum wells (x= 0.09, 0.18, 1.0)”
Physical Review B 52, 2784 (1995)
8. M. Capizzi, F. Martelli, and A. Polimeni
“InGaAs/GaAs Quantum Wells: a Standard Photoluminescence System?”
Annales de Physique 20, C2-183 (1995)
7. P. Borri, M. Gurioli, M. Colocci, F. Martelli, A. Polimeni, A. Patanè, and M. Capizzi
“Excitation energy Dependence of the Optical Properties of InGaAs/GaAs Quantum Wells Heterostructures”
Il Nuovo Cimento 17D, 1383 (1995)








1994
6. M. Capizzi, A. Polimeni, A. Frova, F. Martelli, M. R. Bruni, and M.G. Simeone
“Above Barrier Confinement in InGaAs/GaAs Multiple Quantum-Well Structures”
Solid State Electronics 37, 641, (1994)
5. A. Polimeni, D. Marangio, M. Capizzi, A. Frova, and F. Martelli
“Giant Photoluminescence Enhancement in Deuterated Highly Strained InAs/GaAs Quantum Wells”
Applied Physics Letters 65, 1254 (1994)
4. M. Capizzi, A. Frova, A. Polimeni, D. Marangio F. Martelli, and A. Rudra
“Deuterium in In-Based Quantum Wells”
Superlattices and Microstructures 15, 113 (1994)

3. M. Capizzi, A. Polimeni, B. Bonanni, V. Emiliani, A. Frova, D. Marangio and F. Martelli
“Deuterium in InGaAs/GaAs Strained Quantum Wells: an Optically active Impurity”
Semiconductors Science and Technology 9, 2233 (1994)

1993
2. F. Martelli, M. Capizzi, A. Frova, A. Polimeni, F. Sarto, M. R. Bruni, and M.G. Simeone
“Exciton confinement in GaAs quantum barriers”
Physical Review B 48, 1643 (1993)
1. F. Martelli, M. Capizzi, A. Frova, A. Polimeni, F. Sarto, M. R. Bruni, and M.G. Simeone
“Exciton Modes in Quantum Barriers”
Society of PhotoOptical Instrumentation Engineers 1985, 376 (1993)




Publications in Proceedings of International conferences
33c) D D'Agostino, C Di Giorgio, F Bobba, A Di Trolio, A Amore Bonapasta, P Alippi, A Polimeni, AM Cucolo,
”Scanning Probe Microscopy Investigation of H-irradiated ZnO and Co-doped ZnO thin films in dark and UV-light conditions”
Bulletin of the American Physical Society 62 (2017)
32c) G. Ciatto, A. Di Trolio, E. Fonda, P. Alippi, A. Polimeni, M. Capizzi, G. Varvaro, A. A. Bonapasta,
” Defect-induced Magnetism in Cobalt-doped ZnO Epilayers”
AIP Conference Proceedings 1583, 332 (2014)
31c) M. Felicia, G. Pettinari, A. Polimeni, R. Carron, G. Lavenuta, E. Tartaglini, M. De Luca, A. Notargiacomo, D. Fekete, P. Gallo, B. Dwir, A. Rudra, P. C. M. Christianen, J. C. Maan, M. Capizzi, and E. Kapon
” Effects Of Hydrogen Irradiation On The Optical And Electronic Properties Of Site-controlled InGaAsN V-groove Quantum Wires”
AIP Conference Proceedings 1566, 93 (2013)
30c) Marta De Luca, Giorgio Pettinari, Antonio Polimeni, Mario Capizzi, Gianluca Ciatto, Lucia Amidani, Emiliano Fonda, Federico Boscherini4, Francesco Filippone, Aldo Amore Bonapasta, Andreas Knübel, Volker Cimalla, Oliver Ambacher, Damiano Giubertoni, and Massimo Bersani
” Tuning of the Optical Properties of In-rich InxGa1−xN (x=0.82-0.49) Alloys by Light-ion Irradiation at Low Energy”
AIP Conference Proceedings 1566, 93 (2013)
29c) Rinaldo Trotta, Antonio Polimeni, Marco Felici, Giorgio Pettinari, Mario Capizzi, Andrea Frova, Giancarlo Salviati, Laura Lazzarini, Nicola Armani, Luigi Mariucci, Giorgio Bais, Faustino Martelli, Silvia Rubini
”Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering”
Mater. Res. Soc. Symposium Proceedings 994, F02-08 (2006)
28c) F. Masia, G. Pettinari, A. Polimeni, M. Felici, R. Trotta, M. Capizzi, T. Niebling, H. Günther, P. J. Klar, W. Stolz2, A. Lindsay, E. P. O’Reilly, M. Piccin, G. Bais, S. Rubini, F. Martelli, and A. Franciosi
”Photoluminescence under magnetic field and hydrostatic pressure in GaAs1-xNx for probing the compositional dependence of carrier effective mass and gyromagnetic ratio”
AIP Conference Proceedings 893, 157 (2007)
27c) G. Bisognin, D. De Salvador, E. Napolitani, M. Berti, A. Polimeni, M. Felici, M. Capizzi, M. Güngerich, P.J. Klar, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi
”Evidence of a new hydrogen complex in dilute nitride alloys”
AIP Conference Proceedings 893, 155 (2007)
26c) M. Felici, A. Polimeni, A. Scordo, F. Masia, A. Frova, M. Capizzi, Y. Nabetani, T. Okuno, K. Aoki, T. Kato, T. Matsumoto, and T. Hirai
”Influence of the Host Lattice on the O-H Interaction in II-VI Semiconductors”
AIP Conference Proceedings 893, 327 (2007)
25c) M. Felici, R. Trotta, F. Masia,, A. Polimeni,, A. Miriametro, M. Capizzi, P. J. Klar, and W. Stolz
”Investigation of Compositional Disorder in GaAsN:H”
AIP Conference Proceedings 893, 313 (2007)
24c) M. Felici, A. Polimeni, F. Masia, R. Trotta, G. Pettinari, M. Capizzi, G. Salviati, L. Lazzarini, N. Armani, M. Piccin, G. Bais, F. Martelli, S. Rubini, A. Franciosi, and L. Mariucci
”In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors”
AIP Conference Proceedings 893, 31 (2007)
23c) M. Losurdo, M. M. Giangregorio, G. Bruno, T. –H. Kim, P. Wu, S. Choi, M. Morse, A. Brown, F. Masia, A. Polimeni, and M. Capizzi
“Modification of InN properties by interactions with hydrogen and nitrogen”
Mater. Res. Soc. Symposium Proceedings 892, 155 (2006)
22c) A. Polimeni, A. Vinattieri, M. Zamfirescu, F. Masia and M. Capizzi
“Carrier localization in (InGa)(AsN) alloys”
Proceedings of SPIE - The International Society for Optical Engineering 5725, 98 (2005)
21c) S. Mazzucato, D. Nardin, A. Polimeni, M. Capizzi, D. Granados, and J. M., García
“Hydrogenation of stacked self-assembled InAs/GaAs quantum dots”
(2005) AIP Conference Proceedings 772, 621 (2005)


20c) M. Felici, A. Polimeni, M. Capizzi, S. V. Dudiy, A. Zunger, I. A. Buyanova, W. M. Chen, H. P. Xin, and C. W. Tu
“High energy optical transitions in Ga(PN): Contribution from perturbed valence band”
AIP Conference Proceedings 772, 265 (2005)
19c) M. Geddo, G. Guizzetti, R. Pezzuto, A. Polimeni, M. Capizzi, M. Bissiri, G. Baldassarri H. v H., D. Gollub, and A. Forchel
“Photoreflectance study of hydrogenated (InGa)(AsN)/GaAs heterostructures”
Mater. Res. Soc. Symposium Proceedings 744, 531-536 (2003)

18c) A. Amore Bonapasta, F. Filippone, P. Giannozzi, M. Capizzi, and A. Polimeni
“Hydrogen-nitrogen Complexes in GaAsN Alloys the Role of Doping in the Formation of Mono- and Di-hydrogen Complexes”
Proceedings of the ICPS XXVI, (Edinburgh United Kingdom, 2002) P62 (2003)
17c) G. Baldassarri H. v. H., M. Bissiri, A. Polimeni, M. Capizzi, A. Amore Bonapasta, F. Jiang, M. Stavola, M. Fischer, M. Reinhardt, and A. Forchel
“Hydrogen as a Probe of the Electronic and Lattice Properties of InGaAsN”
Proceedings of the ICPS XXVI, (Edinburgh United Kingdom, 2002), G1.4 (2003)
16c) A. Augieri, G. Baldassarri H. v. H., M. Bissiri, M. Capizzi, A. Polimeni, I. K. Sou, and W. K. Ge
“Hydrogen Passivation of Isoelectronic Impurities in ZnTeS”
Proceedings of the ICPS XXVI, (Edinburgh United Kingdom, 2002), H46 (2003)
15c) M. Capizzi, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Amore Bonapasta, F. Jiang, M. Stavola, M. Fischer, A. Forchel, I. K. Sou, and W. K. Ge
“Photoluminescence and Infrared Absorption Study of Isoelectronic Impurity Passivation by Hydrogen”
Mat. Res. Soc. Symp. Proc. 719, 251 (2002)
14c) A. Levin, A. Patanè, F. Schindler, A. Polimeni, L. Eaves, P. C. Main, and M. Henini
“Quantum-confined Stark shift in In0.5Ga0.5As self-assembled quantum dots grown on (100) and (311)B GaAs substrates”
Proceedings of the 25th Conference on the Physics of Semiconductors p. 1217 (Osaka, Japan, 2001)
13c) A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
“Temperature dependence of light emission and absorption in (InGa)(AsN)/GaAs single quantum wells”
Proceedings of the 25th Conference on the Physics of Semiconductors p. 539 (Osaka, Japan, 2001)
12c) A. Patanè, A. Polimeni, Yu. V. Dubrovskii, P. N. Brounkov, A. E. Belyaev, R. K. Marshall, L. Eaves, P. C. Main, M. Henini, G. Hill
“How is resonant tunnelling affected by self-assembled quantum dots?”
IOP Conference Series 166, 131 (2000)
11c) A. Patanè, A. Polimeni, A. Levin, L. Eaves, P. C. Main, M. Henini, P. M. Smowton, G. Hill
“(InGa)As/(AlGa)As self-assembled quantum dots: optical properties and laser applications”
IOP Conference Series 166, 247 (2000)
10c) A. Patanè, A. Polimeni, M. Henini, L. Eaves, P.C. Main
“Energy emission tuning of InAs/GaAs self-assembled quantum dots by growth interruption”
IOP Conference Series 162, 451 (1999)
9c) A. Patanè, A. Polimeni, M. Henini, L. Eaves, P.C. Main, and G. Hill
“Laser properties of (InGa)As/GaAs self-assembled quantum dots grown on high-index planes”
IOP Conference Series 162, 439 (1999)
8c) A. Polimeni, M. Henini, R. K. Hayden, L. Eaves, P. C. Main, D. Cherns, Y. Atici, K. Uchida and N. Miura
“Effect of the natural substrate patterning on the growth of (InGaAs)/GaAs self-assembled quantum dots: microscopic and optical studies”
Proceedings of the 24th Conference on the Physics of Semiconductors (Jerusalem, Israel, 1998)
7c) P. N. Brounkov, A. R. Kovsh, Y. G. Musikhin and S. G. Konnikov, M. Henini, A. Polimeni, S. T. Stoddart, , L. Eaves, P. C. Main
“Electronic structure of self-assembled InAs quantum dots in GaAs matrix”
Proceedings of the 24th Conference on the Physics of Semiconductors (Jerusalem, Israel, 1998)
6c) S. G. Lyapin, I. E. Itskevich, I. A. Trojan, P. C. Klipstein, L. Eaves, P. C. Main, M. Henini and A. Polimeni.
“Photoluminescence study of self-assembled InAs/GaAs quantum dots under pressure”
Proceedings of the 24th Conference on the Physics of Semiconductors (Jerusalem, Israel, 1998)
5c) A. Polimeni, M. Henini, L. Eaves, S. T. Stoddart, P. C. Main, K. Uchida, R. K. Hayden, and N. Miura
“Optical and Microscopic Properties of In0.5Ga0.5As/GaAs highly strained heterostructures”
Proceedings of Physics Conferences Series (Insitute of Physics), 1997, no. 156 page 519.
4c) J. R. Fletcher, P. J. King, A . Polimeni, R. P. Campion, and S. M. Morley
“Helical current flow at the boundary between two tilted anisotropic conductors: 90° YBCO twist boundaries”
Institute of Physics Conferences Series (Institute of Physics), 1997, no. 158, page 245.

3c) A. Patanè, A. Polimeni, F. Martelli, M. Capizzi, L. Lazzarini, L. Nasi, and G. Salviati
“Absence of a critical thickness for the self-aggregation of quantum dots in InAs/GaAs quantum wells”
Proceedings of the 23rd Conference on the Physics of Semiconductors, page 1305, XXIII ICPS, Berlin, Germany, (1996)
2c) A. Polimeni, A. Patanè, M. Capizzi, and F. Martelli
“Photoluminescence of InAs/GaAs Quantum Dots”
Proceedings of Workshop on Highlights of Light Spectroscopy on Semiconductors, page 205, Frascati, Italy, (1996)
1c) M. Capizzi, A. Frova, D. Marangio, A. Polimeni and F. Martelli
“Photoluminescence of InAs/GaAs Near-Monolayer Quantum Wells Before and After Deuterium Irradiation”
Proceedings of the 22nd Conference on the Physics of Semiconductors, page 1149, XXII ICPS, Vancouver, Canada, (1994)