BALUCANI MARCO

Ricercatore 
Settore scientifico disciplinare di riferimento  (ING-INF/01)
Ateneo Università degli Studi di ROMA "La Sapienza" 
Struttura di afferenza Dipartimento di INGEGNERIA DELL'INFORMAZIONE, ELETTRONICA E TELECOMUNICAZIONI 
Recapiti Elenco recapiti telefonici
E-Mail balucani@die.uniroma1.it

Orari di ricevimento

fissare appuntamento via email.
Scrivere a balucani@die.uniroma1.it oppure marco.balucani@uniroma1.it

Curriculum

MARCO BALUCANI
Scientific Leadership Profile:
My research interests are multidisciplinary. They include nano/microelectromechanical systems, microelectronic integrated circuits (IC) design and technology, electrochemistry of semiconductors and metals, integrated optoelectronics, materials science and applications of porous silicon, solid state physics and thin film technology. Throughout my scientific research career, I have developed new technologies to provide novel applications in various interdisciplinary research fields (e.g. MEMS, probe card, aerospace micro-rockets, electronic packaging, optical and electrical interconnections and silicon solar cell) some of the developed technologies have been industrialized and are under industrialization. I ideated, planned and managed National and European scientific projects that brought more than 2MEuro of funding, managing 80% of the total budget as the direct scientific responsible person of the projects, 15% as the main research person with the task to coordinate the research and 5% as the main researcher. I have published more than 134 papers in international journals and/or conferences (6 of them as invited talks), organized two international conference and one national conference, and deposited more than 9 international patents. At present, 6 patents are extended in USA, Europe, China, Singapore, Taiwan and Japan. Furthermore, I have created the Nanostructure Laboratory at the Electronic Department and participated as a key person in the foundation and management of the CNIS (Research Center of Nanotechnology for applied engineering of the Sapienza University of Rome) where younger researchers are now growing due also to national and international collaboration with other universities and companies.
Published journals since 2003 n. 25
N. citation of all journals = 232+68 (Scopus Secondary)=300
Years 17
Nomalized citation=300/17=17,647
hc=7
Self-evaluation of contribution to research fields, ability for interdisciplinary research and coaching young researchers:
My contribution to the scientific research is both theoretical and experimental and embraces various fields proving my ability to work successfully in interdisciplinary researches. In the silicon-based light emitting device (LED) project, I have showed for the first time a silicon-based LED that is able to reach a modulation speed up to 200 MHz [1]; developed a model that is able to explain the increase in quantum efficiency of the silicon-based LED with respect to the low visible light emission efficiency of reverse biased p-n junctions [2]. I was one of the key persons of the Italian group in organizing the European ESPRIT project (SIBLE No. 022644) and I was the researcher that presented and defended the results of the Italian group at all European review meetings. In this project, I have presented for the first time a fast silicon opto-isolator with a BER (Bit Error Rate) lower than 10^-6 and the first optical link made totally in silicon and silica [3]. Looking for a way to realize a whole optical integrated system in silicon, the international collaboration with other groups working in modelling, characterization and technology of waveguides was established. I was the main promoter of the European project OLSI No. 28934 with the tasks, entrusted to me by the scientific responsible coordinator of the project, to coordinate all research groups of the project and to direct the research team for the Italian group that was coordinating the project. I have presented and defended the project at all European Commission review and final meetings. The fulfilment of the project provided a breakthrough in the visible waveguiding for the silicon-based technology.
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Waveguide propagation losses less than 0.5 dB/cm were demonstrated. The technology provides the
possibility for the silicon-based waveguides to be buried with an ELO (Epitaxial Lateral
Overgrowth) layer on which integrated circuits can be built. Due to the originality of the research,
the European Community organized a special section at the E-MRS meeting (June 2001) to which I
was invited to give the presentation “Optical Link in Silicon: Results and Future Developments”.
During the project fulfilment, more than 21 papers including two invited papers [4] were published
in international journals and/or conference journals.
Experience gained in the oxidized porous silicon waveguides and porous silicon based LED as well
as the international cooperation with a scientific group that developed SOI structures using FIPOS
(Full Isolation by Porous Oxidized Silicon), allowed me to plan a national project in the framework
of CNR - MADESS II. During this research, 3 international patents were deposited [5] and novel
scientific results were obtained [6]. Different structures and devices based on the patented
technology were fabricated and characterized [7]. Modelling of SOI field effect transistor (FET)
was made. A general expression for FET drain current for any kind of FET channel shape was
derived from the rectangular FET geometry [8]. A new model was developed and published [9,10]
being able to explain observed current oscillations in SOI structures that were inexplicable by the
previously available theory. This result was obtained in collaboration with a modelling group that
previously correlated the observed current oscillations with the temperature oscillations of the
crystal lattice and the thermally generated electron-hole pairs. In the modelling research field, using
SILVACO simulator to confirm the model, I proved that the electron velocity saturation in the longchannel
JFET and MESFET is not a mandatory-requirement for the drain current saturation. The
drain current saturation is the result of the screening of the field, which the drain voltage creates
[11]. Two invited papers [12,13] appreciated the research in the SOI technology and its application
at its true value. I have promoted an interdisciplinary research in the aerospace field using silicon
based technology to provide the satellite micro-propulsion with a new micro-thruster technology. I
planned the SMART (Small Motor AeRospace Technology) project that was funded by the Italian
Space Agency and managed the research work of the project that realized a working prototype
[14,15]. In the framework of this research, different approaches were used and thin film hard
ceramics were tested in collaboration with international partner expert in laser ablation as possible
applications in the electronic, optoelectronic and aerospace fields [16,17,18]. In the electronic
circuit field (discrete and integrated) and MEMS, I have planned different research projects and
managed them as a scientific coordinator. During the execution of these projects, I also proposed a
novel application for the elevator field [19] and published more than 20 papers in international
journals and/or conference proceedings. I followed more than 50 students graduating thesis and now
supervising three PhD student. One of the PhD student working at ST-NXP Wireless Cellular
Systems Division. A main breakthrough in the field of probe card technology was obtained with an
innovative solution. The probe card technology issues are one of the most challenging problems to
be solved in the integrated circuits testing scenario and probing for the wafer burn-in test is even
more challenging. Approaching to this field with a novel concept, I moved the concept from an idea
on the paper to working prototypes within four years (2004-2008), and now the technology is at
industrial level. The research project funded by the Italian Minister of Education, University and
Research (MIUR) with the co-funding of the European Community is one of the thirty-two
exemplary project of the “Eccellenze nel PON Ricerca” (Excellence in the PON Research) and the
patented technology is extended in USA, Europe, China, Japan and Singapore. The new philosophy
of such technology was presented at SEMICON west 2005 at San Francisco. Due to the industrial
interest in this research it was impossible to publish the results and that is why during the period
October 2004 to 2007 I had to stop scientific publications meanwhile depositing 5 international
patents. The developed technology was awarded with an invited presentation “Nano-sized Porous
Silicon as a Sacrificial Material for Layer Transfer” NATO ARW "Nanoscaled Semiconductor-on-
Insulator Structures and Devices" Sudak, Crimea, Ukraine, October 15-19, 2006. During the
research conducted for the probe card technology novel approaches using vertically structured
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silicon were tested and new directions using nanostructures are under investigation [20,21,22]. The development of such new technology (i.e. adhesion modulation of metal to porous silicon) is under investigation for many different industrial applications[23, 24, 25, 26]. Playing with the possibility to tightly control thickness and porosity of porous silicon a new technique to synthesis nanoporous metal is under development [ 20, 27, 28]. Thanks to the porous structure of the obtained metals different industrial applications are been investigated [29,30]. Another interesting application, that I am developing, in collaboration with a foreign university, is to use porous silicon as buffer layer to deposit zinc oxide directly on silicon wafers [31, 32, 33]. Nanoporous structures as macroporous structures are also under investigation for the realization of new compliant mechanism for the realization of micro-robots and micro-loudspeakers[34, 35, 36] as superhydrophobic surfaces [37].
A new breakthrough technology and process is under development using dynamic liquid meniscus and porous silicon as adhesion layer for metal in solar cell technology[40]. The new technology and process that I developed was cited in a solar cell professional magazine Photon International, July 2013 in the science & technology section in the article “Plating for high efficiency”.
In the field of IC design I developed, in collaboration with IC companies, new circuit topologies [e.g. 38, 39]. In the 2004 - 2008 period I reduced my publication activity (halted from 2006 to 2007) and privileged industrial R&D activity. Doing this I was able to get enough funding (more that 1.5 Meuro) to buy new instruments for the Nanostrutture Laboratory. I created and manage a research group on MEMS technologies and open new employment opportunities for graduate students, due to the tight collaboration established with national and international companies as also the direct foundation, in 2006, of an external university spin-off.
Scientific responsibility of research and development projects:
* 2002-2003, Scientific responsible for National Research Council - National Institute for the Matter of Physics (CNR-INFM) of the SMART (Small Motor AeRospace Technology) project funded by the Italian Space Agency (budget Euro 125.000,00).
* 2003-2005, Scientific responsible for CNR-INFM of the project “Research on the Electronic Technologies for the application in ultra-wideband power amplifier” funded by Marconi Selenia Communication (today SELEX), (budget Euro 91.000,00).
* 2004-2007, Scientific responsible for CNR-INFM of the project “R&D for a Filament Winding prototype equipment able to realize aeronautical and civil components in composite Material” funded by Sistema Compositi S.p.A., (budget 138.600,00).
* 2004-2007, Scientific responsible for CNR-INFM of the project “Development on novel substrates in Al/Al2O3 for power electronic modules” funded by Semikron Electronic GmbH, (budget Euro 50.000,00)
* 2004-2008, Scientific responsible for CNR-INFM of the project “Design and development of a wireless system to determine position and velocity of lifts and wireless system to manage and control the lift system” funded by CIAM Servizi S.r.l., (budget Euro 330.000,00).
* 2004-2008, Scientific responsible for CNR-INFM of the project “R&D of probe card technology for wafer level packaging testing” funded by ELES Semiconductor Equipment S.p.A, (budget Euro 940.000,00).
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* 2010-2012, Scientific responsible for Research Center of Nanotechnology for applied engineering of the Sapienza University of Rome (CNIS) of the project “Nanoklystron for the THz frequency range” funded by Selex Galielo S.p.A. (budget Euro 130.000,00).
In the list are excluded all national research funding lower than Euro 50.000,00.
Teaching qualifications:
My teaching experience started in 1997 at the university of Rome Sapienza assisting Prof. A.Ferrari in his Electronic lectures and giving lectures on SOI technology for the course of Electronic Technology Devices of Prof. F. Irrera. In May 2000, as I won the tender for the assistant professor, I'm teaching electronic at the second year of graduating engineering students. In 2003 I proposed and created a new advanced course in micro electromechanical systems (MEMS) that I teach to graduated students for the graduating magister laurea, at the II level Master in Technologies for micro and nanoelectronics, and to electronic Ph.D students. I supervised more than 35 graduating students, tutored Erasmus students and supervising Ph.D. students.
The list below shows all my teaching career:
 From 2003 to today: Microelectromechanical systems (MEMS), Advanced course, 60 hours lectures
 From 2008 to today: MEMS Laboratory, Advanced course 30 hours lectures
 From 2004 to 2007: Space Electronics, Advanced course 50 hours lectures
 From 2000 to 2006: Electronics, Basic course 60 hours lectures
Ph.D Supervisor:
1. Dr. Filippo Maria Neri – Ph.D cicle XXIV - Advanced CMOS IC design techniques for improving the efficiency of integrated audio CODECs frontend
2. Dr. Paolo Nenzi - Ph.D cicle XXV - Nanostructured porous materials for micro- and nano-electronics applications
3. Dr. Konstatin Kholostov - Ph.D cicle XXVII - Porous silicon technology: development of transversal technology for energy conversion and MEMS applications
Invited presentations
[1] NATO Advanced Research Workshop "Nanoscaled Semiconductor-on-Insulator Structures and Devices", Nanosized Porous Silicon as a Sacrificial Material for Layer Transfer - Sudak, Crimea, Ukraine 2006
[2] NATO Advanced Research Workshop “Science and Technology of Semiconductor on Insulator Structures And Devices Operating In a Harsh Environment”, Porous Silicon based SOI: history and prospects - Kiev, Ukraine 2004
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[3] NATO Advanced Research Workshop “Progress in Semiconductor on Insulator Structures And Devices Operating At Extreme Conditions”, Oxidized Porous Silicon Based SOI: New Potentialities - Kiev, Ukraine 2000
[4] ROMOPTO 2000: Sixth Conference on Optics, Oxidized porous silicon waveguides losses - Bucharest, Romania, 2000
[5] Porous Semiconductors: Science and Technology (PSST-98), Oxidised porous silicon: from dielectric isolation to integrated optical waveguides – Mallorca, Spain, 1998
[6] ROMOPTO '97: Fifth Conference on Optics, Characterization of integrated optical waveguides based on oxidized porous silicon - Bucharest, Romania, Sep.1997
Organisation of International conferences
 May 1996 Rome, Member of the organizing and scientific committee of the international conference INSEL ’96 “Light Emission from Silicon” supported by the European Community.
 July 2003 - Passignano (PG), Organizer of the national Italian Electronic Group meeting (GE2003).
 April 8-9, 2010, Member of the organizing and scientific committee of the international MOS Modeling and Parameter Extraction Working Group MOS-AK/GSA Workshop - Sapienza Università di Roma
International Prizes/Awards/Academy memberships/Referee
 Best Poster Award for “Cu Si nanocomposite based PS matrix” E-MRS, Symposium F (2008)
 Valued IEEE Member for 19 years (Member N. 00233155)
 Member of the Board of Directors for the Research Center of Nanotechnology for applied engineering of the Sapienza University of Rome, since 2010
 Member of the Ph.D. Engineering Electronic Board, since 2000
 Article Reviewer for the Institute of Physics (IOP) Journals (i.e. Semiconductor Science and Technology and Journal of Semiconductors IOP's journals) (period 2011-2012)
 Article Reviewer for RSC Advances Royal Society of Chemistry, Thomas Graham House, Science Park, Cambridge, CB4 0WF, UK (period 2011-2012)
 Article Reviewer for “Physica Status Solidi (a) - applications and materials science” Editor: Wiley-VCH (period 2012)
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 Article Reviewer for “Journal Nanoparticle Research” Editor: Springer (period 2012)
Cited publications
[1] M.Balucani et al. Applied Physics Letters , Vol.72 n.6 - 9 (1998) 639
[2] M.Balucani et al. Applied Physics Letters , Vol.74, n.14, (1999), 1960-1962
[3] M. Balucani et al. Journal of Non-Crystalline Solids 266-269 (2000) 1238-1240
[4] M. Balucani et al. SPIE Vol. 3405 0277-786X/98 (762-767); G. Lamedica, M. Balucani, V. Bondarenko, A. Ferrari SPIE Vol. 4430 (2001) pp. 177-180
[5] M. Balucani et al. WO/2001/009933A1, M. Balucani et al WO/2001/009942A1, M. Balucani et al WO/2001/009943A1
[6] G. Lamedica, M. Balucani, A. Ferrari, V. Bondarenko, V. Yakovtseva, L. Dolgyi, Materials Science & Engineering B 91-92 (2002) 445-448
[7] M. Balucani et al. Microelectronic Engineering 36 (1997) 115; M. Balucani et al. Journal of Porous Material 7, 215-222 (2000); M. Balucani et al. SPIE Vol. 4430 (2001) pp. 741-747
[8] V. N. Dobrovolsky, M. Balucani, A. Ferrari Solid State Electronics, 44 (2000) 1865-1897
[9] V. N. Dobrovolsky, L. V. Ishchuk, G. K. Ninidze, M. Balucani, G. Lamedica, A. Ferrari, Microelectronic Engineering 48, (1999) 343-346
[10] V. N. Dobrovolsky, L. V. Ishchuk, G. K. Ninidze, M. Balucani, G. Lamedica, A. Ferrari, Journal of Applied Physics Vol. 88 n.11, (2000) pp. 6554
[11] Balucani, M. et al. Solid State Electronics Volume: 49, Issue: 8, August, 2005, pp. 1251-1254
[12] Bondarenko, V. Yakovtseva, L.Dolgyi, N. Vorozov, S. Volchek, M. Balucani, G. Lamedica, A.Ferrari-Progress in SOI Structures and Devices Operating at Extreme Conditions- edit by F. Balestra, - May 2002, ISBN 1-4020-0575-X, Book Series: NATO SCIENCE SERIES: Mathematics, Physics and Chemistry : Volume 58
[13] Balucani, M., et al. published in - Progress in SOI Structures and Devices Operating at Extreme Conditions, 53-64 - edit by D. Flandre, 2005 Kluwer Academic Publisher. Printed in the Netherlands
[14] G. Lamedica, M. Balucani, P. Tromboni, M. Marchetti, A. Ferrari, IEEE Aerospace and Electronic Systems Magazine, vol 17, issue 9, (2002) 22-2
[15] Balucani, M. et al. Proc.of The 4S Symp: Small Satellites, Systems and Services (ESA SP-571). 20-24 Sep 2004, La Rochelle, France. Editor: B. Warmbein. Published on CDROM., p.48.1
[16] Filipescu M, Scarisoreanu N, Matei DG, Dinescu G, Ferrari A, Balucani M, Toma O, Ghica C, Nistor LC, Dinescu M, MATERIALS SCIENCE IN SEM. PROC.7 , 4-6,pp 209-214, ÿÿ2004
[17] B. Mitu, G. Dinescu, E. Budianu, A. Ferrari, M. Balucani, G. Lamedica, A. Dauscher, M. Dinescu Applied Surface Science Vol. 184 (2001) pp. 96-100
[18] Vrejoiu, I.; Matei, D.G.; Morar, M.; Epurescu, G.; Ferrari, A.; Balucani, M.; Lamedica, G.; Dinescu, G.; Dinescu M. Materials Science in Sem. Proc.5, Issue: 2-3, 2002, pp. 253-257
[19] Balucani M. WO/2008/018107A1
[20] H. Bandarenka, M. Balucani, R. Crescenzi, A. Ferrari, Superlattices and Microstructures, Volume 44, Issues 4-5, October-November 2008, Pages 583-587
[21] A. Klyshko, M. Balucani, A. Ferrari, Superlattices and Microstructures, Volume 44, Issues 4-5, October-November 2008, Pages 374-377
[22] H. Bandarenka, A. Shapel and M. Balucani, Solid State Phenomena Vol. 151 (2009) pp 222-226
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[23] Nenzi, P., Crescenzi, R., Klyshko, A., Bondarenko, V. and Balucani, M. "Compliant interconnect technology for power modules in automotive applications" (2011) Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, 2, pp. 430-433.
[24] Nenzi, P., Tripaldi, F., Marzano, F.S., Palma, F., and Balucani, M. u-Helix 3D-antenna technology (2011) Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotec 2011, 2, pp. 434-437.
[25] Balucani M. "PHOTOVOLTAIC CELL WITH POROUS SEMICONDUCTOR REGIONS FOR ANCHORING CONTACT TERMINALS, ELECTROLITIC AND ETCHING MODULES, AND RELATED PRODUCTION LINE", Patent WO/2011/110682A2
[26] Balucani, M., Nenzi, P., Crescenzi, R., Dolgyi, L., Klyshko, A., Bondarenko, V. Transfer layer technology for the packaging of high power modules (2010) Electronics System Integration Technology Conference, ESTC 2010 - Proceedings, art. no. 5642974.
[27] Bandarenka, H., Redko, S., Nenzi, P. and Balucani, M. Copper displacement deposition on nanostructured porous silicon (2011) Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech2011, 2, pp. 269-272.
[28] Bandarenka, H., Shapel, A. and Balucani, M. Cu-Si nanocomposites based on porous silicon matrix (2009) Diffusion and Defect Data Pt.B: Solid State Phenomena, 151, pp. 222-226.
[29] Balucani M., "METHOD FOR MAKING MICROSTRUCTURES BY CONVERTING POROUS SILICON INTO POROUS METAL OR CERAMICS" Patent US20110104828
[30] Balucani, M., Nenzi, P., Crescenzi, C., Marracino, P., Apollonio, F., Liberti, M., Densi, A., Colizzi, C. Technology and design of innovative flexible electrode for biomedical applications (2011) Proceedings - Electronic Components and Technology Conference, art. no. 5898682, pp. 1319-1324.
[31] Chubenko, E.B., Bondarenko, V.P., Balucani, M. Visible photoluminescence of zinc oxide films electrochemically deposited on silicon substrates (2009) Technical Physics Letters, 35 (12), pp. 1160-1162.
[32] Balucani, M., Nenzi, P., Chubenko, E., Klyshko, A., Bondarenko, V. (2011) JOURNAL OF NANOPARTICLE RESEARCH Volume: 13 Issue: 11 Pages:5985-5997 DOI: 10.1007/s11051-011-0346-7.
[33] Chubenko, E.B., Klyshko, A.A., Bondarenko, V.P., Balucani, M. Electrochemical deposition of zinc oxide on a thin nickel buffer layer on silicon substrates (2011) Electrochimica Acta, 56 (11), pp. 4031-4036.
[34] Balucani, M., Belfiore, N.P., Crescenzi, R., Genua, M., Verotti, M. Developing and modeling a plane 3 DOF compliant micromanipulator by means of a dedicated MBS code (2011) Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, 2, pp. 659-662.
[35] Balucani, M., Belfiore, N.P., Crescenzi, R., Verotti, M. The development of a MEMS/NEMS-based 3 D.O.F. compliant micro robot (2010) 19th International Workshop on Robotics in Alpe-Adria-Danube Region, RAAD 2010 - Proceedings, art. no. 5524590, pp. 173-179.
[36] Neri, F., Di Fazio, F., Crescenzi, R. and Balucani, M. A novel micromachined loudspeaker topology (2011) Proceedings - Electronic Components and Technology Conference, art. no. 5898666, pp. 1221-1227.
[37] Balucani, M., Bolognesi, G., Casciola, C.M., Chinappi, M., Giacomello, A., Nenzi, P. Superhydrophobic porous silicon surfaces (2011) Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, 2, pp. 493-496.
[38] Neri, F., Di Fazio, F., Teng, R., Balucani, M. A novel series-parallel inverting charge pump topology in 40nm CMOS technology (2011) 2011 IEEE International Conference on Microwaves, Com., Antennas and Electronic Systems,COMCAS 2011, art. no. 6105825.
[39] Groeneweg, W.H., Pilloud, B., Neri, F., Notermans, G., Balucani, M., Helfenstein, M. A class-AB/D audio power amplifier for mobile applications integrated into a 2.5G/3G baseband processor (2010) IEEE Trans. on Circuits and Systems I: Regular Papers, 57 (5), art. no. 5460955, pp. 1003-1016
[40] M. Balucani et al. New selective wet processing, Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd, Las Vegas, NV, 28-31 May 2013; M. Balucani et al. “New selective processing technique for solar cell” 4th Metallization Workshop, Kostanza (Germany) May 6-7 2013
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In the 2004 - 2008 period I reduced my publication activity (halted from 2006 to 2007) and privileged industrial R&D activity. Doing this I was able to get enough funding (more than 1.5 Meuro) to buy new instruments for the Nanostrutture Laboratory. I created and manage a research group on MEMS technologies and open new employment opportunities for graduate students, due to the tight collaboration established with national and international companies as also the direct foundation, in 2006, of an external spin-off (i.e. Rise Technology S.r.l.).
The granted patents presented for the evaluation are all extended in the following countries: USA, France, Great Brittan, Poland, Spain, Germany, Italy, China, Taiwan, Japan and Singapore and are all licenced to companies.
The managed industrial research project are:
* 2003-2005, Scientific responsible for CNR-INFM of the project “Research on the Electronic Technologies for the application in ultra-wideband power amplifier” funded by Marconi Selenia Communication (today SELEX) (budget Euro 91.000,00).
* 2004-2007, Scientific responsible for CNR-INFM of the project “R&D for a Filament Winding prototype equipment able to realize aeronautical and civil components in composite Material” funded by Sistema Compositi S.p.A., (budget 138.600,00).
* 2004-2007, Scientific responsible for CNR-INFM of the project “Development on novel substrates in Al/Al2O3 for power electronic modules” funded by Semikron Electronic GmbH, (budget Euro 50.000,00)
* 2004-2008, Scientific responsible for CNR-INFM of the project “Design and development of a wireless system to determine position and velocity of lifts and wireless system to manage and control the lift system” funded by CIAM Servizi S.r.l., (budget Euro 330.000,00).
* 2004-2008, Scientific responsible for CNR-INFM of the project “R&D of probe card technology for wafer level packaging testing” funded by ELES Semiconductor Equipment S.p.A,
(budget Euro 940.000,00).
* 2010-2012, Scientific responsible for Research Center of Nanotechnology for applied engineering of the Sapienza University of Rome (CNIS) of the project “Nanoklystron for the THz frequency range” funded by Selex Galielo S.p.A. (budget Euro 130.000,00).
The external spin-off company also won the start-up call from the Ministry of Economic Development: http://www.sviluppoeconomico.gov.it/images/stories/DPS/dd-19-aprile-2011.pdf (position 42)